1 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
70
A
I
C90
T
C
= 90
C
35
A
I
CM
T
C
= 25
C, 1 ms
140
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 22
W
I
CM
= 70
A
(RBSOA)
Clamped inductive load, L = 30
m
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 720 V, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 22
W,
non repetitive
P
C
T
C
= 25
C
IGBT
300
W
Diode
190
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
Weight
TO-247 HL
6
g
Features
Hole-less TO-247 package for clip
mounting
High frequency IGBT and anti-parallel
FRED in one package
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
V
CES
= 1200 V
I
C25
=
70 A
V
CE(SAT)
=
4 V
97514D (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 5 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
750
m
A
V
GE
= 0 V
T
J
= 125
C
15
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4
V
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
PLUS TO-247
TM
(IXSX35N120AU1)
G
C
E
C (TAB)
High Voltage
IXSX 35N120AU1
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
20
26
S
Pulse test, t
300
m
s, duty cycle
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
170
A
C
ies
3900
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
295
pF
C
res
60
pF
Q
g
150
190
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
40
60
nC
Q
gc
70
100
nC
t
d(on)
80
ns
t
ri
150
ns
t
d(off)
400
900
ns
t
fi
500
700
ns
E
off
10
mJ
t
d(on)
80
ns
t
ri
150
ns
E
on
8
mJ
t
d(off)
400
ns
t
fi
700
ns
E
off
15
mJ
R
thJC
0.42 K/W
R
thCK
0.15
K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
m
H, V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V, Pulse test,
2.35
V
t
300
m
s, duty cycle d
2 %, T
J
= 125
C
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 480 A/
m
s
32
36
A
t
rr
V
R
= 540 V
T
J
= 100
C
225
ns
I
F
= 1 A; -di/dt = 200 A/
m
s; V
R
= 30 V
T
J
= 25
C
40
60
ns
R
thJC
0.65 K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
m
H, V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
PLUS247
TM
(IXSX)
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
IXSX 35N120AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 5
2000 IXYS All rights reserved
IXSX 35N120AU1
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV /
V
GE
(
t
h)
- N
o
r
m
a
l
iz
e
d
0.7
0.8
0.9
1.0
1.1
1.2
1.3
BV
CES
I
C
= 3mA
V
GE
- Volts
4
5
6
7
8
9
10 11 12 13 14 15
I
C
-
Am
per
es
0
10
20
30
40
50
V
CE
= 10V
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
V
CE
(s
at
)
- N
o
rm
a
l
i
z
e
d
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
GE
=15V
V
GE
- Volts
8
9
10
11
12
13
14
15
V
CE
- V
o
lts
0
1
2
3
4
5
6
7
8
9
10
T
J
= 25C
V
CE
- Volts
0
2
4
6
8
10
12 14 16 18 20
I
C
-
Am
per
es
0
50
100
150
200
250
T
J
= 25C
7V
9V
11V
13V
V
CE
- Volts
0
1
2
3
4
5
I
C
-
Am
per
es
0
10
20
30
40
50
60
70
T
J
= 25C
V
GE
=15V
11V
7V
9V
V
GE(th)
I
C
= 4mA
13V
V
GE
= 15V
I
C
= 17.5A
I
C
= 35A
I
C
= 70A
T
J
= - 40C
T
J
= 25C
T
J
= 125C
I
C
=1 7.5A
I
C
= 35A
I
C
= 70A
Fig.3
Collector-Emitter Voltage
Fig.4 Temperature Dependence
vs. Gate-Emitter Voltage
of Output Saturation Voltage
Fig.5
Input Admittance
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig.1 Saturation Characteristics
Fig.2 Output Characterstics
4 - 5
2000 IXYS All rights reserved
IXSX 35N120AU1
Fig.11 Transient Thermal Impedance
Fig.9
Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
Fig.7
Turn-Off Energy per Pulse and
Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current
Per Pulse and Fall Time on R
G
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Z
th
j
J
C
-
K
/
W
0.001
0.01
0.1
1
Single Pulse
D=0.2
V
CE
- Volts
0
200
400
600
800
1000
1200
I
C
-
A
m
per
es
0.01
0.1
1
10
100
T
J
= 125C
R
G
= 2.7
dV/dt < 5V/ns
Q
G
- nanocoulombs
0
50
100
150
200
V
GE
- V
o
l
t
s
0
3
6
9
12
15
I
C
= 35A
V
CE
= 500V
R
G
- Ohms
0
10
20
30
40
50
E
of
f
- m
ill
ij
o
u
l
e
s
14
15
16
17
18
t
fi
-
nanoseconds
250
500
750
1000
1250
T
J
= 125C
I
C
= 35A
t
fi
E
off
I
C
- Amperes
0
10
20
30
40
50
60
70
E
of
f
- m
ill
ijo
u
l
e
s
5
10
15
20
25
t
fi
-
nanoseconds
250
500
750
1000
1250
E
off
t
fi
D = Duty Cycle
T
J
= 125C
R
G
= 10
D=0.01
D=0.02
D=0.05
D=0.1
D=0.5
5 - 5
2000 IXYS All rights reserved
IXSX 35N120AU1
di
F
/dt - A/s
200
400
600
800
1000
I
RM
-
Am
pe
res
0
20
40
60
80
T
J
- Degrees C
0
40
80
120
160
N
o
r
m
a
liz
ed
I
RM
/ Q
r
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
di
F
/dt - A/s
0
200
400
600
800
1000
t
rr
-
m
se
c
o
n
d
s
0.0
0.2
0.4
0.6
0.8
1.0
di
F
/dt - A/s
10
100
1000
Q
r
-
m
co
ul
o
m
bs
0
2
4
6
8
10
12
Q
r
I
RM
di
F
/dt - A/s
0
200
400
600
800
1000
t
fr
-
na
no
sec
o
n
d
s
0
200
400
600
800
1000
1200
V
FR
-
Vol
t
s
0
10
20
30
40
50
60
V
FR
Voltage Drop - Volts
0
1
2
3
C
u
rr
e
n
t
- A
m
p
e
r
e
s
0
10
20
30
40
50
60
70
80
90
T
J
= 100C
V
R
= 540V
T
J
= 125C
I
F
= 60A
T
J
= 100C
T
J
= 150C
T
J
= 25C
T
J
= 100C
V
R
= 540V
T
J
= 100C
V
R
= 540V
t
fr
typ.
I
F
= 120A
I
F
= 60A
I
F
= 30A
max.
I
F
= 60A
max.
I
F
= 60A
typ.
I
F
= 120A
I
F
= 60A
I
F
= 30A
max.
I
F
= 60A
typ.
I
F
= 120A
I
F
= 60A
I
F
= 30A
Fig.14 Junction Temperature Dependence
Fig.15 Reverse Recovery Chargee
off I
RM
and Q
r
Fig.16 Peak Reverse Recovery Current
Fig.17 Reverse Recovery Time
Fig.12 Maximum Forward Voltage Drop
Fig.13 Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
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