2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
76
A
I
C90
T
C
= 90
C
39
A
I
CM
T
C
= 25
C, 1 ms
152
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
I
CM
= 76
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3) TO-247
1.13/10Nm/lb.in.
Weight
TO-247 AD
6
g
TO-268
4
g
DS97548A(02/03)
HiPerFAST
TM
IGBT
IXGH39N60B
V
CES
= 600 V
IXGH39N60BD1 I
C25
= 76 A
IXGT39N60B
V
CE(sat)
= 1.7 V
IXGT39N60BD1 t
fi
= 200 ns
Features
International standard packages
JEDEC TO-247 AD & TO-268
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Very fast switching speeds for high
frequency applications
Preliminary data
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
39N60B
600
V
I
C
= 750
A
39N60BD1
600
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
39N60B
2.5
5.0
V
I
C
= 500
A
39N60BD1
2.5
5.0
V
I
CES
V
CE
=
0.8 V
CES
T
J
= 25
C
39N60B
200
A
V
GE
= 0 V
T
J
= 125
C
39N60B
1
mA
T
J
= 125
C
39N60BD1
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100 nA
V
CE(sat)
I
C
=
I
90
,
V
GE
= 15 V
1.7
V
(D1)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
(IXGH)
C (TAB)
G
E
C (TAB)
TO-268
(IXGT)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
19
28
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2750
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
39N60B
200
pF
39N60BD1
240
pF
C
res
50
pF
Q
G
110
150 nC
Q
GE
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
35 nC
Q
GC
40
75 nC
t
d(on)
25
ns
t
ri
30
ns
t
d(off)
250
500
ns
t
fi
200
360
ns
E
off
4.0
6.0 mJ
t
d(on)
25
ns
t
ri
30
ns
E
on
0.3
mJ
t
d(off)
360
ns
t
fi
350
ns
E
off
6.0
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V, Pulse test T
J
=150
C
1.6
V
t
300
s, duty cycle d
2 % T
J
= 25
C
2.5
V
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/
s
6
A
t
rr
V
R
= 100 V
T
J
= 100
C 100
ns
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V T
J
= 25
C
25
ns
R
thJC
0.9 K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
2003 IXYS All rights reserved
Fig. 1. Saturation Voltage
Characteristics @ 25 Deg. C
0
5
10
15
20
25
30
35
40
0.4
0.8
1.2
1.6
2
2.4
V
CE
- Volts
I
C
-
A
m
p
e
r
e
s
V
GE
=15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output
Characteristics @ 25 Deg. C
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
V
CE
- Volts
I
C
-
A
m
p
e
r
e
s
V
GE
=15V
13V
11V
9V
7V
5V
Fig. 3. Saturation Voltage
Characteristics @ 125 Deg. C
0
20
40
60
80
100
0
1
2
3
4
5
V
CE
- Volts
I
C
-
A
m
p
e
r
e
s
V
GE
=15V
13V
11V
9V
7V
5V
Fig. 4. Temperature Dependence of
V
CE(SAT)
0.7
0.85
1
1.15
1.3
1.45
-50 -25
0
25
50
75 100 125 150
T
J
- Degrees Centigrade
V
CE
(
S
AT
)
-
N
o
r
m
al
i
z
ed
I
C
=78A
I
C
=39A
I
C
=19.5A
Fig. 5. BV
CES
& V
(GE)TH
vs. Junction
Temperature
0.7
0.8
0.9
1
1.1
1.2
-50 -25
0
25
50
75
100 125 150
T
J
- Degrees Centigrade
BV
CE
S
&
V
(G
E
)
T
H
-
N
o
r
m
a
liz
e
d
V
GE(TH)
BV
CES
Fig. 6. Admittance
0
20
40
60
80
100
4
5
6
7
8
9
V
GE
- Volts
I
C
- A
m
p
e
r
e
s
T
J
= 125
C
25
C
-40
C
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Fig. 12. Transient Thermal Response
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(T
H
)
J
C
(C
/
W
)
Fig. 11. Gate Charge
0
3
6
9
12
15
0
20
40
60
80
100
120
Q
G
- nanocoulombs
V
CE
-
V
o
lt
s
V
CE
=300V
I
C
=20A
I
G
=10mA
Fig. 7. Transconductance
0
10
20
30
40
50
0
20
40
60
80
100
120
I
C
- Amperes
G
FS
- S
i
e
m
e
n
s
T
J
= -40
C
25C
125C
Fig. 8. Dependence of E
OFF
on I
C
2
4
6
8
10
12
14
16
10
30
50
70
90
I
C
- Amperes
E
OF
F
-
m
ill
ijo
ule
s
R
G
= 5 Ohms
R
G
= 56 Ohms
T
J
= 125
C
V
GE
= 15V
V
CE
= 480V
Fig. 9. Dependence of E
OFF
on R
G
0
2
4
6
8
10
12
14
16
0
10
20
30
40
50
60
R
G
- Ohm s
E
O
FF
-
m
i
ll
ijo
u
l
e
s
I
C
= 19.5A
I
C
= 39A
I
C
= 78A
T
J
= 125C
V
GE
= 15V
V
CE
= 480V
Fig. 10. Dependence of E
OFF
on
Temperature
0
3
6
9
12
15
18
0
25
50
75
100
125
150
T
J
- Degrees Centigrades
E
OF
F
-
m
i
lli
J
o
u
l
e
s
I
C
=
78A
I
C
=
39A
I
C
=
19.5A
Solid lines - R
G
= 5 Ohms
Dashed lines - R
G
= 56 Ohms
V
GE
= 15V
V
CE
= 480V
2003 IXYS All rights reserved
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0
1
2
3
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 30A
Fig. 14 Peak reverse current I
RM
versus -di
F
/dt
Fig. 13 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 12 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 15 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 16 Recovery time t
rr
versus -di
F
/dt
Fig. 17 Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 18 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
IXGH39N60B
IXGT39N60B
IXGH39N60BD1 IXGT39N60BD1
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