1997 IXYS All rights reserved
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C, limited by leads
75
A
I
C90
T
C
= 90
C
50
A
I
CM
T
C
= 25
C, 1 ms
200
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
I
CM
= 100
A
(RBSOA)
Clamped inductive load, L = 30
H
@ 0.8 V
CES
P
C
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
HiPerFAST
TM
V
CES
= 600 V
IGBT with Diode
I
C25
= 75 A
V
CE(sat)
= 2.7 V
Combi Pack
t
fi
= 275 ns
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 500
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 500
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
250
A
V
GE
= 0 V
T
J
= 125
C
15
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.7
V
Features
l
Hole-less TO-247 for clip mount
l
High current capability
l
High frequency IGBT and anti-
parallel FRED in one package
l
Low V
CE(sat)
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Reduces assembly time and cost
l
High power density
97513 (5/97)
IXGX50N60AU1
IXGX50N60AU1S
TO-247 Hole-less
(50N60AU1)
G
C
C (TAB)
E
G
C (TAB)
TO-247 Hole-less SMD
(50N60AU1S)
Preliminary data
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGX50N60AU1
IXGX50N60AU1S
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
25
35
S
Pulse test, t
300
s, duty cycle
2 %
Q
g
200
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
50
nC
Q
gc
80
nC
t
d(on)
50
ns
t
ri
210
ns
t
d(off)
200
ns
t
fi
275
400
ns
E
off
4.8
mJ
t
d(on)
50
ns
t
ri
240
ns
E
on
3
mJ
t
d(off)
280
ns
t
fi
600
ns
E
off
9.6
mJ
R
thJC
0.42 K/W
R
thCK
0.15
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.7
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 480 A/
s
19
33
A
t
rr
V
R
= 360 V
T
J
= 125
C
175
ns
I
F
= 1 A; -di/dt = 200 A/
s; V
R
= 30 V T
J
= 25
C
35
50
ns
R
thJC
0.75 K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
TO-247 HOLE-LESS SMD
TO-247 HOLE-LESS
1997 IXYS All rights reserved
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV
/ V
C
E
(sa
t
)
-
No
rm
aliz
ed
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
C
-
Am
pe
res
0
10
20
30
40
50
60
70
80
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
V
C
E
(sa
t
)
-
No
rma
lize
d
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
V
GE
- Volts
4
5
6
7
8
9
10 11 12 13 14 15
V
CE
-
Vol
ts
0
1
2
3
4
5
6
7
8
9
10
V
CE
- Volts
0
2
4
6
8
10
12
14
16
18
20
I
C
-
Am
pe
res
0
50
100
150
200
250
300
350
5V
7V
9V
11V
13V
V
CE
- Volts
0
1
2
3
4
5
I
C
-
Am
pe
res
0
10
20
30
40
50
60
70
80
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 80A
I
C
= 40A
I
C
= 20A
T
J
=
125C
T
J
= 25C
V
GE(th)
@ 250A
V
CE
= 100V
BV
CES
@ 3mA
T
J
= 25C
T
J
= 25C
T
J
= 25C
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 3 Collector-Emitter Voltage
Fig. 4 Temperature Dependence
vs. Gate-Emitter Voltage
of Output Saturation Voltage
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
IXGX50N60AU1
IXGX50N60AU1S
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGX50N60AU1
IXGX50N60AU1S
V
CE
- Volts
0
5
10
15
20
25
Ca
pa
cita
nce
- p
F
0
500
1000
1500
2000
2500
3000
3500
4000
4500
C
ies
C
res
C
oes
V
CE
- Volts
0
100
200
300
400
500
600
700
I
C
-
A
m
p
eres
0.01
0.1
1
10
100
T
J
= 125C
dV/dt < 3V/ns
Total Gate Charge - (nC)
0
50
100
150
200
250
V
GE
- Vo
lts
0
3
6
9
12
15
Pulse Width - seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Z
th
J
C
(K
/W
)
0.001
0.01
0.1
1
D = Duty Cycle
Single Pulse
D=0.5
D=0.2
I
C
= 40A
V
CE
= 500V
D=0.1
D=0.05
D=0.02
D=0.01
Fig.10 Transient Thermal Impedance
Fig.9
Capacitance Curves
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
= IXGK 50N60AU1
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