=NVVV=fuvp=^==
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C, limited by leads
75
A
I
C90
T
C
= 90
C
50
A
I
CM
T
C
= 25
C, 1 ms
200
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
I
CM
= 100
A
(RBSOA)
Clamped inductive load, L = 30
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
s
(SCSOA)
R
G
= 22
,
non repetitive
P
C
T
C
= 25
C
250
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 SMD
4
g
TO-247
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
IGBT High Speed
V
`bp
= 600 V
I
`OR
= 75 A
Short Circuit SOA Capability
V
`bE~F
= 2.5 V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
; V
GE
= 15 V
2.2
2.5
V
VTROQ_= EQLVVF
m~=~~=
TO-247 AD
G
C
E
`=Eq^_F
Features
International standard package
JEDEC TO-247 AD, and
TO-247 SMD for surface mount
Guaranteed Short Circuit SOA
capability
High frequency IGBT
Latest generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
IXSH 50N60B
fuvp=jlpcbqp=~=fd_q=~=========rKpK=~W
QIUPRIRVO
QIUUNINMS
RIMNTIRMU
RIMQVIVSN
RINUTINNT
RIQUSITNR
QIURMIMTO
QIVPNIUQQ
RIMPQITVS
RIMSPIPMT
RIOPTIQUN
RIPUNIMOR
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
16
23
S
Pulse test, t
300
s, duty cycle
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
160
A
C
ies
3850
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
440
pF
C
res
50
pF
Q
g
167
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
nC
Q
gc
88
nC
t
d(on)
70
ns
t
ri
70
ns
t
d(off)
150
300
ns
t
fi
150
300
ns
E
off
3.3
6.0 mJ
t
d(on)
70
ns
t
ri
70
ns
E
on
0.6
mJ
t
d(off)
230
ns
t
fi
230
ns
E
off
4.8
mJ
R
thJC
0.5 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
TO-247 AD Outline
m
aK
j
f
jK
j~K
jK
j~K
^
QKT
RKP
KNUR
KOMV
^
N
OKO
OKRQ
KMUT
KNMO
^
O
OKO
OKS
KMRV
KMVU
NKM
NKQ
KMQM
KMRR
N
NKSR
OKNP
KMSR
KMUQ
O
OKUT
PKNO
KNNP
KNOP
`
KQ
KU
KMNS
KMPN
a
OMKUM
ONKQS
KUNV
KUQR
b
NRKTR
NSKOS
KSNM
KSQM
RKOM
RKTO
MKOMR
MKOOR
i
NVKUN
OMKPO
KTUM
KUMM
iN
QKRM
KNTT
m
PKRR
PKSR
KNQM
KNQQ
n
RKUV
SKQM
MKOPO
MKORO
o
QKPO
RKQV
KNTM
KONS
p
SKNR _p`
OQO _p`
IXSH 50N60B
=NVVV=fuvp=^==
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of V
CE(sat)
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
V
GE
- Volts
4
6
8
10
12
14
16
I
C
- A
m
p
e
res
0
20
40
60
80
100
V
CE
-Volts
0
5
10
15
20
25
30
35
40
C
a
pac
i
t
a
nc
e -
pF
10
100
1000
10000
T
J
- Degrees C
25
50
75
100
125
150
V
C
E
(
sat
)
-
No
r
m
a
liz
e
d
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
2
4
6
8
10
I
C
-
A
m
p
e
r
e
s
0
20
40
60
80
100
V
CE
- Volts
0
4
8
12
16
20
I
C
-
A
m
p
e
re
s
0
40
80
120
160
13V
11V
9V
V
CE
= 10V
T
J
= 25C
V
GE
= 15V
T
J
= 25C
I
C
= 25A
I
C
= 50A
I
C
= 100A
T
J
=
125C
C
rss
f = 1Mhz
9V
V
GE
= 15V
T
J
= 25C
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
p
e
re
s
0
20
40
60
80
100
T
J
= 125C
C
iss
C
oss
7V
9V
11V
7V
13V
V
GE
= 15V
13V
11V
V
GE
= 15V
IXSH 50N60B
fuvp=jlpcbqp=~=fd_q=~=========rKpK=~W
QIUPRIRVO
QIUUNINMS
RIMNTIRMU
RIMQVIVSN
RINUTINNT
RIQUSITNR
QIURMIMTO
QIVPNIUQQ
RIMPQITVS
RIMSPIPMT
RIOPTIQUN
RIPUNIMOR
IXYS reserves the right to change limits, test conditions, and dimensions.
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
Figure 11. Transient Thermal Resistance
Figure 7. Dependence of E
ON
and E
OFF
on I
C
.
Figure 8. Dependence of E
ON
and E
OFF
on
R
G
.
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
JC
(K
/
W
)
0.001
0.01
0.1
1
D=0.02
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- A
m
per
e
s
0.1
1
10
100
Q
g
- nanocoulombs
0
25
50
75
100
125
150
175
0
4
8
12
16
20
R
G
- Ohms
0
10
20
30
40
50
60
E
(
O
FF)
-
mill
ijou
l
es
0
5
10
15
20
E
(ON
)
-
milli
joul
es
0
1
2
3
4
I
C
- Amperes
0
20
40
60
80
100
E
(
O
FF)
-
m
i
lli
Joules
0
4
8
12
16
20
24
E
(O
N
)
-
mill
ijou
l
es
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
= 250V
I
C
=50A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J
= 125C
R
G
= 6.2
dV/dt < 5V/ns
D=0.1
D=0.05
Single pulse
D = Duty Cycle
T
J
= 125C
R
G
= 10
600
E
(OFF)
E
(OFF)
D=0.2
D=0.5
D=0.01
I
C
=25A
T
J
= 125C
I
C
= 100A
I
C
= 50A
E
(ON)
E
(ON)
IXSH 50N60B
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