1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
200
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
72N20
72
A
80N20
80
A
I
DM
T
C
= 25
C,
72N20
288
A
pulse width limited by T
JM
80N20
320
A
I
AR
T
C
= 25
C
74
A
E
AR
T
C
= 25
C
45
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
360
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s 300 -
C
M
d
Mounting torque
0.9/6
Nm/lb.in.
Weight
10
g
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
International standard packages
Molding epoxies meet UL
94
V-0
flammability classification
Low R
DS (on)
HDMOS
TM
process
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
V
DSS
I
D25
R
DS(on)
IXFK72N20
200 V
72 A 35
m
W
IXFK80N20
200 V
80 A 30 m
W
t
rr
200 ns
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V,I
D
= 0.5 I
D25
72N20
35
m
W
80N20
30
m
W
Pulse test, t
300
m
s, duty cycle d
2 %
97523C (07/00)
G = Gate
D = Drain
S = Source
TAB = Drain
S
G
D
TO-264 AA
(TAB)
HiPerFET
TM
Power MOSFETs
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
35
42
S
C
iss
5900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1140
pF
C
rss
480
pF
t
d(on)
40
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
55
ns
t
d(off)
R
G
= (External),
120
ns
t
f
26
ns
Q
g(on)
280
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
39
nC
Q
gd
120
nC
R
thJC
0.35
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
72N20
72
A
80N20
80
A
I
SM
Repetitive; pulse width limited by T
JM
72N20
288
A
80N20
320
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
200
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/
m
s, V
R
= 100 V
1.2
m
C
I
RM
10
A
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
IXFK72N20
IXFK80N20
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75
100 125 150
I
D
- A
m
p
e
res
0
20
40
60
80
100
V
GS
- Volts
2
4
6
8
10
I
D
- A
m
p
e
res
0
40
80
120
160
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N
)
-
N
o
r
m
a
liz
e
d
0.8
1.2
1.6
2.0
2.4
I
D
= 40A
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
p
e
r
e
s
0
40
80
120
160
200
V
DS
- Volts
0
4
8
12
16
20
I
D
- A
m
p
e
r
e
s
0
40
80
120
160
200
5V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
T
J
= 125
o
C
6V
5V
6V
IXFK72N20
IXFK80N20
V
GS
= 10V
9V
8V
I
D
= 80A
T
J
= 25
o
C
I
D
- Amperes
0
50
100
150
200
250
R
DS
(
O
N
)
-
N
o
r
m
a
l
ize
d
0.8
1.2
1.6
2.0
2.4
2.8
3.2
T
j
= 125
0
C
T
j
=25
0
C
V
GS
= 10V
7V
7V
V
GS
= 10V
9V
8V
IXFK72N20
IXFK80N20
Figure 2. Output Characteristics at 125
O
C
Figure 1. Output Characteristics at 25
O
C
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
4 - 4
2000 IXYS All rights reserved
V
SD
- Volts
0.4
0.8
1.2
1.6
2.0
I
D
- A
mpere
s
0
40
80
120
160
200
V
DS
- Volts
1
1 0
1 00
I
D
-
A
mper
e
s
1
1 0
1 00
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
a
pacitance - pF
100
1000
10000
Gate Charge - nC
0
50
100
150
200
250
300
350
V
GS
-
V
o
lt
s
0
2
4
6
8
10
12
Crss
Coss
Ciss
V
DS
= 100 V
I
D
= 40 A
I
G
= 1 mA
f = 1MHz
300
T
C
= 25
O
C
10 ms
1 ms
100 ms
200
T
J
= 125
O
C
T
J
= 25
O
C
DC
Pulse Width - Seconds
10
-3
10
-2
10
-1
10
0
10
1
R
(th)
JC
- K/W
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
IXFK72N20
IXFK80N20
Figure 8. Capacitance Curves
Figure 7. Gate Charge
Figure 9. Source Current vs. Source
to Drain Voltage
Figure10. Forward Bias Safe Operating Area
Figure 11. Transient Thermal Resistance
PDF 
ZIP