1997 IXYS Corporation. All rights reserved.
96524A (5/97)
Features
International standard package
JEDEC TO-264 AA
Two mached dice connected in parallel
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
G
C
E
G = Gate
C = Collector
E = Emitter
TAB = Collector
TO-264 AA
V
CES
=
600 V
I
C25
=
80 A
V
CE(sat)
=
2.7 V
t
fi
= 275 ns
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C, limited by leads
80
A
I
C90
T
C
= 90
C
80
A
I
CM
T
C
= 25
C, 1 ms
200
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
I
CM
= 100
A
(RBSOA)
Clamped inductive load, L = 30
H
@ 0.8 V
CES
P
C
T
C
= 25
C
500
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque (M4)
0.9/6
Nm/lb.in.
Weight
10
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 500
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 500
A, V
CE
= V
GE
2.5
5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
400
A
V
GE
= 0 V
T
J
= 125
C
2
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.7
V
IXGK80N60A
HiPerFAST
TM
IGBT
Preliminary data
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK80N60A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= 40A; V
CE
= 10 V,
30
50
S
Pulse test, t
300
s, duty cycle
2 %
Q
g
400
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
70
nC
Q
gc
160
nC
C
ies
8000
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
860
pF
C
res
200
pF
t
d(on)
50
ns
t
ri
210
ns
t
d(off)
300
ns
t
fi
350
500
ns
E
off
10
12.5
mJ
t
d(on)
50
ns
t
ri
240
ns
E
on
3
mJ
t
d(off)
400
ns
t
fi
600
ns
E
off
15
mJ
R
thJC
0.25 K/W
R
thCK
0.15
K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
TO-264 AA Outline
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