1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
IXFN
90N20 100N20 106N20
V
DSS
T
J
= 25
C to 150
C
200
200
200 V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
200
200
200 V
V
GS
Continuous
20
20
20 V
V
GSM
Transient
30
30
20 V
I
D25
T
C
= 25
C, Chip capability
90
100
106 A
I
D80
T
C
= 80
C, limited by external leads
76
-
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
360
400
424 A
I
AR
T
C
= 25
C
50
50
A
E
AR
T
C
= 25
C
30
30
30 mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
5
5 V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
500
520
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
-
C
V
ISOL
50/60 Hz, RMS
t = 1 min
-
2500
V~
I
ISOL
1 mA
t = 1 s
-
3000
V~
M
d
Mounting torque
0.9/6
1.5/13
Nm/lb.in.
Terminal connection torque
-
1.5/13
Nm/lb.in.
Weight
10
30
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
l
International standard packages
q
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
q
miniBLOC with Aluminium nitride
isolation
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
q
Fast intrinsic Rectifier
Applications
q
DC-DC converters
q
Synchronous rectification
q
Battery chargers
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
q
Temperature and lighting controls
q
Low voltage relays
Advantages
q
Easy to mount
q
Space savings
q
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
200
V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
400
m
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
m
s,
IXFK90N20
0.023
W
duty cycle d
2 %
IXFN100N20
0.023
W
IXFN106N20
0.020
W
TO-264 AA (IXFK)
S
G
D
D
S
G
S
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
92804H (7/97)
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
V
DSS
I
D25
R
DS(on)
IXFK 90 N 20
200 V
90 A
23 m
W
IXFN 100 N 20
200 V
100 A
23 m
W
IXFN 106 N 20
200 V
106 A
20 m
W
t
rr
200 ns
TO-264 AA
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
60
S
C
iss
9000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1600
pF
C
rss
590
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
80
ns
t
d(off)
R
G
= 1
W
(External),
75
ns
t
f
30
ns
Q
g(on)
380
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
70
nC
Q
gd
190
nC
R
thJC
TO-264 AA
0.25
K/W
R
thCK
TO-264 AA
0.15
K/W
R
thJC
miniBLOC, SOT-227 B
0.24
K/W
R
thCK
miniBLOC, SOT-227 B
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
IXFK90N20
90
A
IXFN100N20
100
A
IXFN106N20
106
A
IXFK90N20
I
SM
Repetitive;
IXFN100N20
360
A
pulse width limited by T
JM
IXFN106N20
424
A
V
SD
I
F
= 100 A, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
200
ns
Q
RM
I
F
= 50 A, -di/dt = 100 A/
m
s, V
R
= 100 V
3
m
C
I
RM
38
A
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
miniBLOC, SOT-227 B
IXFK100N20
IXFN90N20
IXFN106N20
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
IXFK100N20
IXFN90N20
IXFN106N20
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
- N
o
r
m
a
l
i
z
e
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
Amper
es
0
20
40
60
80
100
120
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(
on)
-
N
o
r
m
al
i
z
ed
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
= 53A
I
D
- Amperes
0
50
100
150
200
250
300
350
R
DS
(
on)
-
N
o
r
m
al
i
z
ed
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
- A
m
p
e
r
e
s
0
20
40
60
80
100
120
140
160
180
200
V
DS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
- A
m
p
e
r
e
s
0
20
40
60
80
100
120
140
160
180
200
6V
5V
V
GS
= 15V
V
GS
= 10V
V
GS
= 10V
BV
DSS
V
GS(th)
9V
8V
7V
T
J
= 25C
T
J
= 25C
T
J
= 25C
106N20
90N20
4 - 4
2000 IXYS All rights reserved
Fig.10 Transient Thermal Impedance
T
J
= 25C
V
SD
- Volts
0.4
0.6
0.8
1.0
1.2
I
D
-
A
m
per
e
s
0
20
40
60
80
100
Pulse Width - Seconds
0.001
0.01
0.1
1
The
r
m
a
l
R
e
s
ponse -
K/
W
0.01
0.1
V
DS
- Volts
0
5
10
15
20
25
C
apaci
t
ance -
pF
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
C
rss
C
oss
C
iss
Gate Charge - nCoulombs
0
50
100 150 200 250 300 350 400
V
GE
- V
o
l
t
s
0
2
4
6
8
10
12
14
V
DS
= 100V
I
D
= 50A
I
G
= 10mA
f = 1MHz
V
DS
= 25V
T
J
= 125C
0.5
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
IXFK100N20
IXFN90N20
IXFN106N20
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