2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
13
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
78
A
I
AR
T
C
= 25
C
26
A
E
AR
T
C
= 25
C
40
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS, t = 1, leads-to-tab
2500
V~
F
C
Mounting Force
11..65/2.5..15
N/lb
Weight
2
g
G = Gate
D = Drain
S = Source
DS99227(10/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= I
T
260
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHV
TM
Power MOSFET
V
DSS
= 500
V
I
D25
= 13
A
R
DS(on)
= 260 m
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
ISOPLUS220
TM
(IXTC)
E153432
Advanced Technical Information
G
D
S
Isolated Tab
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
IXTC 26N50P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
=
T
, pulse test
20
28
S
C
iss
3600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
380
pF
C
rss
48
pF
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
25
ns
t
d(off)
R
G
= 4
(External)
58
ns
t
f
20
ns
Q
g(on)
96
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
20
nC
Q
gd
45
nC
R
thJC
1.25 K/W
R
thCK
0.21
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive
78
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
400
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
5.0
C
Note: Test Current I
T
= 13A
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
ISOPLUS220 Outline
IXTC 26N50P
2004 IXYS All rights reserved
IXTC 26N50P
Fig. 2. Extended Output Characteristics
@ 25
C
0
10
20
30
40
50
60
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
5.5V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125
C
0
3
6
9
12
15
18
21
24
27
30
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
4.5V
5V
5.5V
Fig. 1. Output Characteristics
@ 25
C
0
3
6
9
12
15
18
21
24
27
30
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
5V
4.5V
5.5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n )
- N
o
rm
a
l
i
z
e
d
I
D
= 26A
I
D
= 13A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
3
6
9
12
15
18
21
24
27
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
0
5
10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
R
D S
(
o
n
)
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC 26N50P
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
90 100
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 250V
I
D
= 13A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
3.5
4
4.5
5
5.5
6
6.5
V
G S
- Volts
I
D
- A
m
p
e
r
e
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
0
5
10
15
20
25
30
35
40
45
I
D
- Amperes
g
f s
-
S
i
e
m
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
0.4
0.5
0.6
0.7
0.8
0.9
1
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Ope r ating Are a
0.1
1
10
100
10
100
1000
V
D S
- V olts
I
D
- Amperes
100s
1m s
D C
T
J
= 150C
T
C
= 25C
R
D S(on)
Lim it
10m s
25s
2004 IXYS All rights reserved
IXTC 26N50P
Fig. 13. Maximum Transient Therm al Resistance
0.01
0.10
1.00
10.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h ) J
C
-
C /
W
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