IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
1996 IXYS Corporation. All rights reserved.
Features
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Typical Applications
q
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Ctd btsydwd
q
0 td btswtqqd
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a
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C
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C
o
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T
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C
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T
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P
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a
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C
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t
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l
T
h
y
r
i
s
t
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P
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a
s
e
C
o
n
t
r
o
l
T
h
y
r
i
s
t
o
r
C
SC
SC
SC
SC
S
1
0
1
1
1
0
1
1
1
0
1
1
1
0
1
1
1
0
1
1
II
II
I
TRMS
= 2300 A
I
TAVM
= 1000 A
V
RRM
= 1800 - 2500
V
Symbol
Test Conditions
Maximum Ratings
I
TRMS
2300
A
I
TAVM
T
C
= 82
C; 180
sine
1000
A
I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
19800
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
21000
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
18000
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
20000
A
i
2
dt
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
1960000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1830000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1620000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1660000
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 2500 A
320
A/
s
f = 5
Hz, t
P
=200
ms
V
D
= 1/2 V
DRM
I
G
= 2 A
di
G
/dt = 2 A/
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
s
120
W
I
T
= I
TAVM
t
P
= 500
s
60
W
t
P
=
10 ms
16
W
V
RGM
5
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+ 50
C
M
d
Mounting force
24 ... 28
kN
Weight
600
g
1
2
4
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1800
1800
CS 1011 - 18io1
2200
2200
CS 1011 - 22io1
2500
2500
CS 1011 - 25io1
3
3
4
1
2
Data according to DIN/IEC 747-6
IXYS reserves the right to change limits, test conditions and dimensions
IXYS reserves the right to change limits, test conditions, and dimensions.
CS 1011
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
60
mA
V
T
I
T
= 3.14 I
TAVM
;T
VJ
= 25
C
2.1
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
1.2
V
r
T
0.32
m
V
GT
V
D
= 12 V;
T
VJ
= 25
C
3.0
V
I
GT
V
D
= 12 V;
T
VJ
= 25
C
300
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.25
V
I
L
T
VJ
= 25
C; t
P
= 10
s
1.0
A
I
G
= 2 A; di
G
/dt = 2 A/
s
I
H
T
VJ
= 25
C; V
D
= 12 V; R
GK
=
0.3
A
t
gd
T
VJ
= 25
C; V
D
= 500 V
2.5
s
I
G
= 2 A; di
G
/dt = 2 A/
s
t
q
T
VJ
= T
VJM
; I
T
= 1000 A, t
P
= 200
s; di/dt = -10 A/
s typ. 150
s
V
R
= 100 V; dv/dt = 50 V/
s; V
D
= 2/3 V
DRM
R
thJC
0.02
K/W
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