IXYS reserves the right to change limits, conditions and dimensions.
CS 19
2003 IXYS All rights reserved
Symbol
Conditions
Maximum Ratings
I
T(RMS)
T
VJ
= T
VJM
35
A
I
T(AV)M
T
C
= 85C; 180 sine
13
A
I
TSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
100
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
105
A
T
VJ
= T
VJM
;
t = 10 ms (50 Hz), sine
85
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
90
A
I
2
t
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
50
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
45
A
2
s
T
VJ
= T
VJM
;
t = 10 ms (50 Hz), sine
36
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
33
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
;
repetitive; I
T
= 20 A
100
A/s
f = 50 Hz; t
P
= 200 s;
V
D
=
2
/
3
V
DRM
;
I
G
= 0.08 A;
non repetitive; I
T
= I
T(AV)M
500
A/s
di
G
/dt = 0.08 A/s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
=
2
/
3
V
DRM
500
V/s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;
t
P
= 30 s
5
W
I
T
= I
T(AV)M
;
t
P
= 300 s
2.5
W
P
GAV
0.5
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
T
L
1.6mm from case; 10s
260
C
F
C
Mounting force
11...65 / 2.4...11
N/lb
Weight
2
g
V
RRM
= 800/1200 V
I
T(RMS)
= 35 A
I
T(AV)M
= 13 A
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
800
800
CS 19-08ho1C
1200
1200
CS 19-12ho1C
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500 V electrical isolation
Low cathode-to-tab capacitance (15pF
typical)
Planar passivated chips
Epoxy meets UL 94V-0
High performance glass
passivated chip
Long-term stability of leakage
current and blocking voltage
Applications
Motor control
Power converter
AC power controller
Light and temperature control
SCR for inrush current limiting
in power supplies or AC drive
Advantages
Space and weight savings
Simple mounting
98789(4/03)
Phase Control Thyristor
ISOPLUS220
TM
Electrically Isolated Back Surface
Preliminary Data Sheet
A
C
G
* Patent pending
1
2
3
Isolated back surface*
ISOPLUS220
TM
IXYS reserves the right to change limits, conditions and dimensions.
CS 19
2003 IXYS All rights reserved
Symbol
Conditions
Characteristic Values
I
R
, I
D
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
1
mA
V
T
I
T
= 30 A; T
VJ
= 25C
1.65
V
V
T0
For power-loss calculations only (T
VJ
= 125C)
0.87
V
r
T
29
m
V
GT
V
D
= 6 V;
T
VJ
= 25C
1.5
V
T
VJ
= -40C
2.5
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
25
mA
T
VJ
= -40C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
=
2
/
3
V
DRM
0.2
V
I
GD
3
mA
I
L
T
VJ
= 25C; t
P
= 10 s;
75
mA
I
G
= 0.08 A; di
G
/dt = 0.08 A/s
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
50
mA
t
gd
T
VJ
= 25C; V
D
= V
DRM
;
2
s
I
G
= 0.08 A; di
G
/dt = 0.08 A/s
R
thJC
DC current
1.7
K/W
R
thCK
DC current
typical
0.6
K/W
a
Max. acceleration, 50 Hz
50
m/s
2
ISOPLUS220(HV) OUTLINE
Note: All terminals are solder plated.
1 - Cathode
2 - Anode
3 - Gate
1
10
100
1000
0.1
1
10
100
I
G
V
G
mA
V
2
1: I
GT
, T
VJ
= 125C
2: I
GT
, T
VJ
= 25C
3: I
GT
, T
VJ
= -40C
I
GD
, T
VJ
= 125C
1
3
4
5
6
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
0
1
2
3
0
10
20
30
40
50
I
T
A
V
T
V
T
VJ
= 125C
T
VJ
= 25C
Fig. 2 Forward characteristics
Fig. 1 Gate trigger range
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