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Электронный компонент: CS30-14IO1

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2000 IXYS All rights reserved
1 - 3
CS 30
Symbol
Test Conditions
Maximum Ratings
I
T(RMS)
T
VJ
= T
VJM
49
A
I
T(AV)M
T
case
= 85
C; 180
sine
31
A
I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
300
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
320
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
270
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
290
A
It
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
450
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
440
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
365
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
355
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 40 A
150
A/
m
s
f = 50
Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A
non repetitive, I
T
= I
T(AV)M
500
A/
m
s
di
G
/dt = 0.3 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
m
s
10
W
I
T
= I
T(AV)M
t
P
= 300
m
s
5
W
P
GAV
0.5
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
M
d
Mounting torque M3
0.8...1.2
Nm
Weight
6
g
Features
q
Thyristor for line frequency
q
International standard package
JEDEC TO-247
q
Planar passivated chip
q
Long-term stability of blocking
currents and voltages
q
Epoxy meets UL 94V-0
Applications
q
Motor control
q
Power converter
q
AC power controller
q
Switch-mode and resonant mode
power supplies
q
Light and temperature control
Advantages
q
Easy to mount with 1 screw
(isolated mounting screw hole)
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Phase Control Thyristor
V
RRM
= 1200-1600 V
I
T(RMS)
= 49 A
I
T(AV)M
= 31 A
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1200
1200
CS 30-12io1
1400
1400
CS 30-14io1
1600
1600
CS 30-16io1
A
C
G
A
C
TO-247 AD
C = Cathode, A = Anode, G = Gate
TAB = Anode
(TAB)
G
030
2000 IXYS All rights reserved
2 - 3
CS 30
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
I
T
= 45 A; T
VJ
= 25
C
1.6
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
0.9
V
r
T
15
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.0
V
T
VJ
= -40
C
1.2
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
65
mA
T
VJ
= -40
C
80
mA
T
VJ
= 125
C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
5
mA
I
L
T
VJ
= 25
C; t
P
= 10
m
s
150
mA
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
100
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
R
thJC
DC current
0.62
K/W
R
thJH
DC current
0.82
K/W
a
Max. acceleration, 50 Hz
50
m/s
2
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
10
100
1000
1
10
100
1000
s
t
gd
I
G
1
10
100
1000
10000
0.1
1
10
I
G
V
G
mA
V
4
2
1
5
6
mA
typ.
Limit
3
T
VJ
= 25C
I
GD
, T
VJ
=125C
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
1: I
GT
, T
VJ
= 125C
2: I
GT
, T
VJ
= 25C
3: I
GT
, T
VJ
= -40C
TO-247 AD and ISOPLUS 247
TM
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780
0.800
B
20.80 21.46
0.819
0.845
C
15.75 16.26
0.610
0.640
D*
3.55
3.65
0.140
0.144
E
4.32
5.49
0.170
0.216
F
5.4
6.2
0.212
0.244
G
1.65
2.13
0.065
0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040
0.055
K
10.8
11.0
0.426
0.433
L
4.7
5.3
0.185
0.209
M
0.4
0.8
0.016
0.031
N
1.5
2.49
0.087
0.102
* ISOPLUS 247
TM
without hole
2000 IXYS All rights reserved
3 - 3
0
20
40
60
80
100 120
0
5
10
15
20
25
30
35
40
45
50
I
T(AV)M
0
10
20
30
40
0
10
20
30
40
50
60
70
80
90
0
25
50
75
100
125
150
0.001
0.01
0.1
1
0
100
200
300
400
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
0.001
0.01
0.1
1
10
100
0.0
0.5
1.0
I
TSM
I
T
A
V
T
t
s
P
T
W
I
T(AV)M
A
T
amb
C
t
s
Z
thJC
K/W
V
A
1
2
3
4
5 6 7 8 910
100
1000
I
2
t
t
A
2
s
T
case
A
C
ms
Fig. 8 Transient thermal impedance junction to case
Fig. 3 Forward characteristics
Fig. 4 Surge overload current
I
TSM
: crest value, t: duration
Fig. 5 I
2
t versus time (1-10 ms)
Fig. 6 Power dissipation versus forward current and ambient temperature
Fig. 7 Max. forward current at case
temperature
T
VJ
= 125C
T
VJ
= 45C
50Hz, 80%V
RRM
T
VJ
= 125C
DC
180 sin
120
60
30
R
thHA
:
1 K/W
2 K/W
3 K/W
5 K/W
7.5 K/W
15 K/W
T
VJ
= 45C
DC
180 sin
120
60
30
30
60
120
180
DC
V
R
= 0 V
200
300
T
VJ
= 25C
T
VJ
= 125C
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.62
180
0.71
120
0.748
60
0.793
30
0.817
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.206
0.013
2
0.362
0.118
3
0.052
1.488
400
CS 30