DE275X2-501N16A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS
Company
Preliminary Data Sheet
V
DSS
=
500 V
I
D25
=
16 A
R
DS(on)
=
0.5
P
DHS
=
750 W
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25C to 150C
500 V
V
DGR
T
J
= 25C to 150C; R
GS
= 1 M
500 V
V
GS
Continuous
20 V
V
GSM
Transient
30 V
I
D25
T
c
= 25C
16 A
I
DM
T
c
= 25C, pulse width limited by T
JM
96 A
I
AR
T
c
= 25C
16 A
E
AR
T
c
= 25C
20 mJ
I
S
I
DM
, di/dt
100A/
s, V
DD
V
DSS
,
T
j
150C, R
G
= 0.2
5 V/ns
I
S
= 0
>200 V/ns
P
DHS
(1)
T
c
= 25C, Derate 6.0W/C above 25C
750 W
P
DAMB
(1)
T
c
= 25C
5.0 W
T
J
-55...+150 C
T
JM
150 C
T
stg
-55...+150 C
T
L
1.6mm (0.063 in) from case for 10 s
300 C
Weight
4
g
dv/dt
R
thJHS
(1)
0.17 K/W
Symbol Test
Conditions
Characteristic Values
T
J
= 25C unless otherwise specified
min. typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma
2.5
5.5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25C
V
GS
= 0 T
J
= 125C
50
1
A
mA
R
DS(on)
0.5
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
2 6
S
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
300
S, duty cycle d
2%
Features
Isolated Substrate
-
high isolation voltage (>2500V)
-
excellent thermal transfer
-
Increased temperature and power
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
-
easier to drive
-
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
High Performance Push-Pull RF
Package
Optimized for RF and high speed
switching at frequencies to >65MHz
Easy to mount--no insulators needed
High power density
Common Source Push-Pull Pair
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
DRAIN 1
SG1
SD1
GATE 1
DRAIN 2
SG2
SD2
GATE 2
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in
a common source configuration. The device is optimized for push-pull or
parallel operation in RF generators and amplifiers at frequencies to >65
MHz.
Note: All specifications are per each tran-
sistor, unless otherwise noted.
(1)
Thermal specifications are for the
package, not per transistor
Unless noted, specifications are for each output device
DE275X2-501N16A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS
Company
Symbol Test
Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
min. typ.
max.
R
G
0.3
C
iss
1800
pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
150
pF
C
rss
45
pF
T
d(on)
3
ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
(External)
2
ns
T
d(off)
4
ns
T
off
5
ns
Q
g(on)
50
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
20
nC
Q
gd
30
nC
Source-Drain Diode
Characteristic Values
(T
J
= 25C unless otherwise specified)
Symbol
Test Conditions
min. typ.
max.
I
S
V
GS
= 0 V
16
A
I
SM
Repetitive; pulse width limited by T
JM
96
A
V
SD
1.5
V
T
rr
200
ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
300
s, duty cycle
2%
Q
RM
I
F
= I
S
, -di/dt = 100A/
s,
V
R
= 100V
0.8
C
I
RM
6.5
A
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025
5,640,045
(1) These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the "
DE-
Series MOSFET Mounting Instructions
" technical note on DEI's web site at
www.directedenergy.com/apptech.htm
DE275X2-501N16A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS
Company
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the
device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer ca-
pacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
Doc #9200-0245 Rev 1
2001 Directed Energy, Inc.
5
6
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff
Rd
Lg
Ld
Ls
M3
2
1
3
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