2005 IXYS All rights reserved
1 - 2
0520
DGS
15-018CS
DGSK 32-018CS
IXYS reserves the right to change limits, Conditions and dimensions.
V
RRM
= 180 V
I
DC
= 24 A
C
Junction
= 21 pF
Gallium Arsenide Schottky Rectifier
Second generation
Data according to IEC 60747 and per diode unless otherwise specified
Features
GaAs Schottky Diode with Enhanced
Barrier Height:
lowest operating forward voltage drop due
to additional injection of minority carriers
high switching speed
- low junction capacity of GaAs diode
independent from temperature
- short and low reverse recovery current
peak due to short lifetime of minority
carriers
- soft turn off
Surface Mount Packages:
Incorporating Single and Dual Diode
Topologies
Industry Standard Package Outlines
Epoxy meets UL 94V-0
Applications
Switched Mode Power Supplies:
AC-DC converters
DC-DC converters
with:
high switching frequency
high efficiency
low EMI
for use e. g. in:
telecom
computer
automotive equipment
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 7.5 A;
T
VJ
= 25C
1.25
1.5
V
I
F
= 7.5 A;
T
VJ
= 125C
1.0
V
I
R
V
R
= V
RRM
;
T
VJ
= 25C
0.25 mA
V
R
= V
RRM
;
T
VJ
= 125C
0.25
mA
I
RM
I
F
= 5 A;
-di
F
/dt = 150 A/s;
1.1
A
t
rr
V
R
= 100 V; T
VJ
= 125C
23
ns
C
J
V
R
= 100 V; T
VJ
= 125C
21
pF
R
thJC
4.4 K/W
Symbol
Conditions
Maximum Ratings
V
RRM/RSM
180
V
I
FAV
T
C
= 25
C; DC
24
A
I
FAV
T
C
= 90
C; DC
15
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
80
A
P
tot
T
C
= 25
C
34
W
Diode
Component
Symbol
Conditions
Maximum Ratings
T
VJ
-55...+175
C
T
stg
-55...+150
C
Symbol
Conditions
Characteristic Values
min.
typ.
max.
Weight
TO-252
0.3
g
TO-263
2
g
A
TO-252 AA
A
TAB
Type
Marking on product
Circuit
Package
DGS 15-018CS
15A180AS
DGSK 32-018CS
DGSK 32-018CS
Common cathode
A
C
A
A
C
Single
TO-263 AB
A
A
TAB
A = Anode, TAB = Cathode
2005 IXYS All rights reserved
2 - 2
0520
DGS
15-018CS
DGSK 32-018CS
IXYS reserves the right to change limits, Conditions and dimensions.
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
Outlines TO-252 AA
Outlines TO-263 AB
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
8.00
8.89
.315
.350
E
9.65
10.29
.380
.405
E1
6.22
8.13
.245
.320
e 2.54 BSC
.100 BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.20
0
.008
R
0.46
0.74
.018
.029
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40
10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
1 Anode
2 NC
3 Anode
4 Cathode
0.0
0.5
1.0
1.5
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
t
s
K/W
0.1
1
10
100
1000
10
100
C
J
I
F
A
V
F
V
R
V
pF
V
Z
thJC
T
VJ
= 125C
300
40
Single Pulse
T
VJ
=
125C
25C
TO-252
TO-263
DGS15-018CS
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