2002 IXYS All rights reserved
1 - 2
Advanced Technical Information
DGS 3-01AS
238
IXYS reserve the right to change limits, conditions and dimensions.
Gallium Arsenide Schottky Rectifier
V
RSM
V
RRM
Type
Marking
V
V
on product
100
100
DGS 3-01AS
3A010AS
Features
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
Applications
MHz switched mode power supplies
(SMPS)
Small size SMPs
High frequency converters
Resonant converters
Symbol
Conditions
Maximum Ratings
I
FAV
T
C
= 25C; DC
12
A
I
FAV
T
C
= 90C; DC
8.5
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz); sine
10
A
T
VJ
-55...+175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
18
W
I
FAV
= 12 A
V
RRM
= 100 V
C
Junction
= 19 pF
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
;
T
VJ
= 25C
0.7
mA
V
R
= V
RRM
;
T
VJ
= 125C
0.7
mA
V
F
I
F
= 2 A;
T
VJ
= 125C
0.54
V
I
F
= 2 A;
T
VJ
= 25C
0.62
0.8
V
C
J
V
R
= 50 V;
T
VJ
= 125C
19
pF
R
thJC
8.5
K/W
Weight
0.3
g
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0%
Data according to DIN/IEC 747 and per diode unless otherwise specified
A
C
A = Anode, C = Cathode , TAB = Cathode
A
TO-252 AA
A
C (TAB)
2002 IXYS All rights reserved
2 - 2
Advanced Technical Information
DGS 3-01AS
238
IXYS reserve the right to change limits, conditions and dimensions.
TO-252 AA
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19 2.38
0.086
0.094
A1
0.89 1.14
0.035
0.045
A2
0 0.13
0
0.005
b
0.64 0.89
0.025
0.035
b1
0.76 1.14
0.030
0.045
b2
5.21 5.46
0.205
0.215
c
0.46 0.58
0.018
0.023
c1
0.46 0.58
0.018
0.023
D
5.97 6.22
0.235
0.245
D1
4.32 5.21
0.170
0.205
E
6.35 6.73
0.250
0.265
E1
4.32 5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51 1.02
0.020
0.040
L1
0.64 1.02
0.025
0.040
L2
0.89 1.27
0.035
0.050
L3
2.54 2.92
0.100
0.115
1 Anode
2 NC
3 Anode
4 Cathode
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,01
0,1
1
10
0,00001
0,0001
0,001
0,01
0,1
1
10
0,01
0,1
1
10
t
s
K/W
0,1
1
10
100
1000
10
100
C
J
I
F
A
V
F
V
R
V
pF
V
Z
thJC
T
VJ
= 125C
200
30
Single Pulse
T
VJ
=
125C
25C
DGS 3-01AS
Fig. 1typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
tbd
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
by majority + minority carriers
V
F
(I
F
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
delayed saturation leads to V
FR
Rectifier Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
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