2001 IXYS All rights reserved
1 - 2
DGS 20-015A
DGSK 40-015A
DGS 20-018A
DGSK 40-018A
V
RSM
V
RRM
Type
V
V
150
150
DGS 20-015A
180
180
DGS 20-018A
V
RSM
V
RRM
Type
V
V
150
150
DGSK 40-015A
180
180
DGSK 40-018A
Preliminary Data
A
C
C
TO-220 AC
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Single
Common cathode
TO-220 AB
A
C
A
C (TAB)
A
C
A
11
9
Symbol
Conditions
Maximum Ratings
I
FAV
T
C
= 25
C; DC
23
A
I
FAV
T
C
= 90
C; DC
17
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
30
A
T
VJ
-55...+175
C
T
stg
-55...+150
C
P
tot
T
C
= 25
C
48
W
M
d
mounting torque
0.4...0.6
Nm
Features
q
Low forward voltage
q
Very high switching speed
q
Low junction capacity of GaAs
- low reverse current peak at turn off
q
Soft turn off
q
Temperature independent switching
behaviour
q
High temperature operation capability
q
Epoxy meets UL 94V-0
Applications
q
MHz Switched mode power supplies
(SMPs)
q
Small size SMPs
q
High frequency converters
q
Resonant converters
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
Gallium Arsenide Schottky Rectifier
I
FAV
= 23 A
V
RRM
= 150/180 V
C
Junction
= 33 pF
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C V
R
= V
RRM
2.0
mA
T
VJ
= 125C V
R
= V
RRM
2.0
mA
V
F
I
F
= 7.5 A;
T
VJ
= 125C
0.8
V
I
F
= 7.5 A;
T
VJ
= 25C
0.8
1.0
V
C
J
V
R
= 100 V; T
VJ
= 125C
33
pF
R
thJC
3.1
K/W
R
thCH
0.5
K/W
Weight
2
g
2001 IXYS All rights reserved
2 - 2
DGS 20-015A
DGSK 40-015A
DGS 20-018A
DGSK 40-018A
0.0
0.5
1.0
1.5
2.0
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
t
s
K/W
0.1
1
10
100
1000
10
100
C
J
I
F
A
V
F
V
R
V
pF
V
Z
thJC
T
VJ
=
125C
25C
DGS10-015/018BS
T
VJ
= 125C
400
30
Single Pulse
11
9
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
by majority + minority carriers
V
F
(I
F
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
delayed saturation leads to V
FR
Rectifier Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
Outline
(center pin only for DGSK types)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70
13.97
0.500
0.550
B
14.73
16.00
0.580
0.630
C
9.91
10.66
0.390
0.420
D
3.54
4.08
0.139
0.161
E
5.85
6.85
0.230
0.270
F
2.54
3.18
0.100
0.125
G
1.15
1.65
0.045
0.065
H
2.79
5.84
0.110
0.230
J
0.64
1.01
0.025
0.040
K
2.54
BSC
0.100
BSC
M
4.32
4.82
0.170
0.190
N
1.14
1.39
0.045
0.055
Q
0.38
0.56
0.015
0.022
R
2.29
2.79
0.090
0.110
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