2000 IXYS All rights reserved
1 - 2
V
RSM
V
(BR)min
x
V
RRM
Anode
Cathode
V
V
V
on stud
on stud
900
-
800
DS
75-08B
DSI
75-08B
1300
-
1200
DS
75-12B
DSI
75-12B
1300
1300
1200
DSA
75-12B
DSAI
75-12B
1700
1760
1600
DSA
75-16B
DSAI
75-16B
1900
1950
1800
DSA
75-18B
DSAI
75-18B
x
Only for Avalanche Diodes
Symbol
Test Conditions
Maximum Ratings
I
F(RMS)
T
VJ
= T
VJM
160
A
I
F(AV)M
T
case
= 100
C; 180
sine
110
A
P
RSM
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10
m
s
20
kW
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
1400
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1500
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1250
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1310
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
9800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
9450
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
7820
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
7210
A
2
s
T
VJ
-40...+180
C
T
VJM
180
C
T
stg
-40...+180
C
M
d
Mounting torque
2.4-4.5
Nm
21-40
lb.in.
Weight
21
g
V
RRM
= 800-1800 V
I
F(RMS)
= 160 A
I
F(AV)M
= 110 A
Features
q
International standard package,
JEDEC DO-203 AB (DO-5)
q
Planar glassivated chips
Applications
q
High power rectifiers
q
Field supply for DC motors
q
Power supplies
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
Symbol
Test Conditions
Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
6
mA
V
F
I
F
= 150 A; T
VJ
= 25
C
1.17
V
V
T0
For power-loss calculations only
0.75
V
r
T
T
VJ
= T
VJM
2
m
W
R
thJC
DC current
0.5
K/W
R
thJH
DC current
0.9
K/W
d
S
Creepage distance on surface
4.05
mm
d
A
Strike distance through air
3.9
mm
a
Max. allowable acceleration
100
m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS
75
DSI
75
DSA 75
DSAI 75
744
Rectifier Diode
Avalanche Diode
A = Anode C = Cathode
DO-203 AB
1/4-28UNF
DS
DSI
DSA
DSAI
C
A
A
C
2000 IXYS All rights reserved
2 - 2
DS
75
DSI
75
DSA 75
DSAI 75
2
3
4
5 6 7 8 9
1
10
10
4
10
5
10
-3
10
-2
10
-1
10
0
0
500
1000
1500
0.0
0.5
1.0
1.5
0
50
100
150
200
0
50
100
150
200
0
50
100
150
200
0
50
100
150
200
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.5
1.0
1.5
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
F
W
I
F(AV)M
A
T
amb
C
t
s
Z
thJH
K/W
A
2
s
0
40
80
120
160
200
0
50
100
150
200
I
F(AV)M
T
c
A
V
A
C
Fig. 6 Transient thermal impedance junction to heatsink
R
thJH
for various conduction angles d:
d
R
thJH
(K/W)
DC
0.900
180
1.028
120
1.085
60
1.272
30
1.476
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0731
0.0015
2
0.1234
0.0237
3
0.4035
0.4838
4
0.3000
1.5
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
FSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature
6
4
2
typ. lim.
T
VJ
= 180C
T
VJ
= 25C
T
VJ
= 180C
T
VJ
= 45C
50Hz, 80%V
RRM
T
VJ
= 45C
T
VJ
= 180C
V
R
= 0 V
D C
180 sin
120
60
30
D C
180 sin
120
60
30
R
thJA
:
1 K/W
1.2 K/W
1.6 K/W
2 K/W
3 K/W
4 K/W
30
60
120
180
DC
ase
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