2000 IXYS All rights reserved
1 - 1
DSDI 60
I
FAVM
= 63 A
V
RRM
= 1400-1800 V
t
rr
= 40 ns
Features
q
International standard package
JEDEC TO-247 AD
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
q
Creepage distance between leads
8.5 mm
Applications
q
Antiparallel diode for high frequency
switching devices
q
Anti saturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating and melting
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
q
Operating at lower temperature or
space saving by reduced cooling
Dimensions
See DSEI 60-12 on page D5 - 27
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
V
RSM
V
RRM
Type
V
V
1400
1400
DSDI 60-14A
1600
1600
DSDI 60-16A
1800
1800
DSDI 60-18A
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
100
A
I
FAVM
x
T
C
= 60
C; rectangular, d = 0.5
63
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
800
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
500
A
t = 8.3 ms (60 Hz), sine
540
A
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
450
A
t = 8.3 ms (60 Hz), sine
480
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
1250
A
2
s
t = 8.3 ms (60 Hz), sine
1200
A
2
s
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
1000
A
2
s
t = 8.3 ms (60 Hz), sine
950
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
416
W
M
d
Mounting torque
0.8...1.2
Nm
Weight
6
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
1
2
mA
T
VJ
= 25
C
V
R
= 0.8 V
RRM
0.5
mA
T
VJ
= 125
C
V
R
= 0.8 V
RRM
3
mA
V
F
I
F
= 70 A;
T
VJ
= 125
C
2.6
V
T
VJ
=
25
C
4.1
V
V
T0
For power-loss calculations only
1.9
V
r
T
T
VJ
= T
VJM
10
m
W
R
thJC
0.4
K/W
R
thCK
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/
m
s; V
R
= 30 V; T
VJ
= 25
C
40
ns
t
rr
I
F
= 70 A; -di/dt = 500 A/
m
s; V
R
= 1000 V;
300
ns
I
RM
T
VJ
= 25
C
60
A
t
rr
I
F
= 70 A; -di/dt = 500 A/
m
s; V
R
= 1000 V;
400
ns
I
RM
T
VJ
= 125
C
85
A
Super Fast
Recovery Diode
A
C
TO-247 AD
C
C
A
A = Anode, C = Cathode
036
Preliminary Data
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