2000 IXYS All rights reserved
1 - 1
Features
q
International standard package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency
switching devices
q
Antisaturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable
operation
q
Soft reverse recovery for low
EMI/RFI
q
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
TO-220 AB
C
A
A
A C A
A = Anode, C = Cathode, TAB = Cathode
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
m
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
DSEC 16-02A
I
FAV
= 2x 8 A
V
RRM
= 200 V
t
rr
= 25 ns
V
RSM
V
RRM
Type
V
V
200
200
DSEC 16-02A
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
T
C
= 150C; rectangular, d = 0.5
8
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
tbd
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
80
A
E
AS
T
VJ
= 25C; non-repetitive
0.5
mJ
I
AS
= 2 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
60
W
M
d
mounting torque
0.4...0.6
Nm
Weight
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25C
V
R
= V
RRM
50
m
A
T
VJ
= 150C V
R
= V
RRM
0.2
mA
V
F
y
I
F
= 8 A;
T
VJ
= 150C
0.94
V
T
VJ
= 25C
1.30
V
R
thJC
2.5
K/W
R
thCH
0.5
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/
m
s;
25
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/
m
s
4.1
A
T
VJ
= 100C
008
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