2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-06B
417
I
FAV
= 2x15 A
V
RRM
= 600 V
t
rr
= 25 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEC 30-06B
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
A
C (TAB)
A
C
A
Symbol
Conditions
Maximum Ratings
I
FRMS
50
A
I
FAVM
T
C
= 135C; rectangular, d = 0.5
15
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
110
A
E
AS
T
VJ
= 25C; non-repetitive; I
AS
= 1 A;
L = 100 H
0.1
mJ
L = 20 mH
20
mJ
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
95
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C; V
R
= V
RRM
100
A
T
VJ
= 150C; V
R
= V
RRM
0.5
mA
V
F
I
F
= 15 A;
T
VJ
= 150C
1.54
V
T
VJ
= 25C
2.51
V
R
thJC
1.6
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/s;
25
30
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/s
2.6
A
T
VJ
= 100C
2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-06B
417
200
600
1000
0
400
800
40
60
80
100
120
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
10
20
30
40
50
60
0.00
0.05
0.10
0.15
0.20
0.25
0.30
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
2
4
6
8
10
100
1000
0
50
100
150
200
250
300
0
1
2
3
4
0
10
20
30
40
50
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
T
VJ
= 150C
T
VJ
= 100C
T
VJ
= 25C
I
RM
Q
r
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100C
V
R
= 300 V
T
VJ
= 100C
V
R
= 300 V
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100C
V
R
= 300 V
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100C
I
F
= 15 A
DSEC 30-06B
t
fr
V
FR
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.908
0.0052
2
0.35
0.0003
3
0.342
0.017
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