2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
200
200
DSEI 2x 121-02A
Symbol
Test Conditions
Maximum Ratings (per diode)
I
FRMS
T
VJ
= T
VJM
150
A
I
FAVM
x
T
C
= 70
C; rectangular, d = 0.5
123
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
600
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
1200
A
t = 8.3 ms (60 Hz), sine
1300
A
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
1080
A
t = 8.3 ms (60 Hz), sine
1170
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
7200
A
2
s
t = 8.3 ms (60 Hz), sine
7100
A
2
s
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
5800
A
2
s
t = 8.3 ms (60 Hz), sine
5700
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
250
W
V
ISOL
50/60 Hz, RMS
2500
V~
I
ISOL
1 mA
M
d
Mounting torque
1.5/13
Nm/lb.in.
Terminal connection torque (M4)
1.5/13
Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
1
mA
T
VJ
= 25
C
V
R
= 0.8 V
RRM
0.5
mA
T
VJ
= 125
C
V
R
= 0.8 V
RRM
20
mA
V
F
I
F
= 120 A;
T
VJ
= 150
C
0.89
0.95
V
T
VJ
= 25
C
1.10
V
V
T0
For power-loss calculations only
0.7
V
r
T
T
VJ
= T
VJM
2.1
m
W
R
thJC
0.5
K/W
R
thCK
0.1
K/W
t
rr
I
F
= 1 A; -di/dt = 400 A/
m
s; V
R
= 30 V; T
VJ
= 25
C
35
50
ns
I
RM
V
R
= 100 V;
I
F
= 100 A; -di
F
/dt = 200 A/
m
s
12
15
A
L
0.05
m
H; T
VJ
= 100
C
DSEI 2x 121
I
FAVM
= 2x 123 A
V
RRM
= 200 V
t
rr
= 35 ns
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard package
miniBLOC (ISOTOP compatible)
q
Isolation voltage 2500 V~
q
2 independent FRED in 1 package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
Fast Recovery
Epitaxial Diode (FRED)
miniBLOC, SOT-227 B
E72873
009
M4 screws (4x) supplied
miniBLOC, SOT-227 B
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
37.80
38.20
1.489
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
V
3.30
4.57
0.130
0.180
W
0.780
0.830
19.81
21.08
2000 IXYS All rights reserved
2 - 2
DSEI 2x 121, 200V
200
600
0
400
800
50
75
100
125
150
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
0
50
100
150
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
100 200 300 400 500
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
FR
di
F
/dt
V
200
600
1000
0
400
800
10
30
50
0
20
40
60
10
100
1000
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
0
25
50
75
100
125
150
175
200
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
C
A/
m
s
A/
m
s
t
rr
ns
t
fr
Z
thJC
A/
m
s
s
0.01
0.02
0.05
0.1
0.2
D=0.5
Single Pulse
I
F
=240A
I
F
=120A
I
F
= 60A
T
VJ
= 100C
V
R
= 100V
T
VJ
= 100C
I
F
= 120A
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
=100C
T
VJ
=25C
T
VJ
=150C
T
VJ
= 100C
V
R
= 100V
T
VJ
= 100C
V
R
= 100V
I
F
=240A
I
F
=120A
I
F
= 60A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
I
F
=240A
I
F
=120A
I
F
= 60A
t
fr
V
FR
Fig. 7 Transient thermal impedance junction to case at various duty cycles
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.0725
0.028
2
0.1423
0.092
3
0.2852
0.35
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