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Электронный компонент: DSEI2X121-02P

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2001 IXYS All rights reserved
1 - 2
D5
Symbol
Conditions
Maximum Ratings (per diode)
I
FRMS
T
VJ
= T
VJM
150
A
I
FAVM
T
C
= 70
C; rectangular; d = 0.5
123
A
I
FRM
t
P
< 10 s; rep. rating; pulse width limited by T
VJM
600
A
I
FSM
T
VJ
= 45
C; t = 10 ms (50 Hz), sine
1200
A
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
250
W
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
Weight
20
g
Symbol
Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
1
mA
T
VJ
= 25
C
V
R
= 0.8 V
RRM
0.5
mA
T
VJ
= 125
C V
R
= 0.8 V
RRM
20
mA
V
F
I
F
= 120 A;
T
VJ
= 150
C
0.89
0.95
V
T
VJ
= 25
C
1.10
V
V
T0
For power-loss calculations only
0.7
V
r
T
T
VJ
= T
VJM
2.1
m
R
thJC
0.7
K/W
R
thCK
0.1
K/W
t
rr
I
F
= 1 A; -di/dt = 400 A/s
35
50
ns
V
R
= 30 V; T
VJ
= 25
C
I
RM
V
R
= 100 V; I
F
= 100 A; -di
F
/dt = 200 A/s
12
15
A
L
0.05 H; T
VJ
= 100
C
d
S
Creeping distance on surface
min. 11.2
mm
d
A
Creeping distance in air
min. 11.2
mm
a
Allowable acceleration
max. 50
m/s
DSEI 2x121
I
FAVM
= 2x123 A
V
RRM
= 200 V
t
rr
= 35 ns
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Features
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Low noise switching
Small and light weight
Fast Recovery
Epitaxial Diode (FRED)
139
V
RSM
V
RRM
Type
V
V
200
200
DSEI 2x 121-02P
IXYS reserves the right to change limits, test conditions and dimensions
AC-1
IK-10
LN-9
VX-18
2001 IXYS All rights reserved
2 - 2
D5
DSEI 2x 121-02P
Dimensions in mm (1mm = 0.0394")
200
600
0
400
800
50
75
100
125
150
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
0
50
100
150
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
100 200 300 400 500
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
FR
di
F
/dt
V
200
600
1000
0
400
800
10
30
50
0
20
40
60
10
100
1000
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
0
25
50
75
100
125
150
175
200
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
C
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
0.01
0.02
0.05
0.1
0.2
D=0.5
Single Pulse
I
F
=240A
I
F
=120A
I
F
= 60A
T
VJ
= 100C
V
R
= 100V
T
VJ
= 100C
I
F
= 120A
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
=100C
T
VJ
=25C
T
VJ
=150C
T
VJ
= 100C
V
R
= 100V
T
VJ
= 100C
V
R
= 100V
I
F
=240A
I
F
=120A
I
F
= 60A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
I
F
=240A
I
F
=120A
I
F
= 60A
t
fr
V
FR
Fig. 7 Transient thermal impedance junction to case at various duty cycles