2004 IXYS All rights reserved
1 - 2
DSI 45
420
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
V
RSM
V
RRM
Type
V
V
900
800
DSI 45-08A
1300
1200
DSI 45-12A
1700
1600
DSI 45-16A
DSI 45-16AR
V
RRM
= 800-1600 V
I
F(AV)M
= 48 A
Symbol
Conditions
Maximum Ratings
I
F(AV)M
T
C
= 105C; 180 sine
48
A
I
FSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
475
A
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
520
A
T
VJ
= 150C;
t = 10 ms (50 Hz), sine
380
A
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
420
A
I
2
t
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
1120
A
2
s
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
1120
A
2
s
T
VJ
= 150C;
t = 10 ms (50 Hz), sine
720
A
2
s
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
720
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
M
d
*
mounting torque
0.8...1.2
Nm
V
ISOL
**
50/60 Hz, RMS, t = 1 minute, leads-to-tab
2500
V~
Weight
typical
6
g
* Verson A only; ** Version AR only
Features
International standard package
Planar glassivated chips
Version AR isolated and
UL registered E153432
Epoxy meets UL 94V-0
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Space and weight savings
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
Rectifier Diode
* ISOPLUS 247
TM
without hole
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780
0.800
B
20.80 21.46
0.819
0.845
C
15.75 16.26
0.610
0.640
D*
3.55
3.65
0.140
0.144
E
4.32
5.49
0.170
0.216
F
5.4
6.2
0.212
0.244
G
1.65
2.13
0.065
0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040
0.055
K
10.8
11.0
0.426
0.433
L
4.7
5.3
0.185
0.209
M
0.4
0.8
0.016
0.031
N
2.2
2.59
0.087
0.102
Symbol
Conditions
Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
3
mA
V
F
I
F
= 40 A; T
VJ
= 25
C
1.18
V
V
T0
For power-loss calculations only
0.8
V
r
T
T
VJ
= T
VJM
8
m
R
thJC
DC current
0.55
K/W
R
thCH
typical
0.2
K/W
Data according to IEC 60747
A = Anode, C = Cathode
TO-247 AD
ISOPLUS 247
TM
Version A
Version AR
C (TAB)
C
A
TAB
C
A
A
C
2004 IXYS All rights reserved
2 - 2
DSI 45
420
IXYS reserves the right to change limits, test conditions and dimensions.
0.001
0.01
0.1
1
0
100
200
300
400
500
2
3
4
5 6 7 8 9
1
10
10
2
10
3
10
4
0.0
0.4
0.8
1.2
1.6
0
10
20
30
40
50
60
70
0
10
20
30
40
0
20
40
60
80
100
0
20
40
60
80 100 120 140
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0
20 40 60 80 100 120 140
0
10
20
30
40
50
I
F(AV)M
T
C
A
V
A
C
C
DSI45
T
VJ
= 45C
50Hz, 80% V
RRM
V
R
= 0 V
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
R
thHA
:
0.5 K/W
1.0 K/W
1.5K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
T
VJ
= 150C
T
VJ
= 45C
T
VJ
=150C
T
VJ
= 25C
T
VJ
= 150C
Z
thJC
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.1633
0.016
2
0.2517
0.118
3
0.0933
0.588
4
0.04167
2.6
PDF 
ZIP