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Электронный компонент: IRFP254

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2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
419
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAV
T
C
= 160C; rectangular, d = 0.5
15
A
I
FAV
T
C
= 160C; rectangular, d = 0.5; per device
30
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
280
A
E
AS
I
AS
= 15 A; L = 180 H; T
VJ
= 25C; non repetitive
32
mJ
I
AR
V
A
=1.5 V
RRM
typ.; f=10 kHz; repetitive
1.5
A
(dv/dt)
cr
1000
V/
s
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
105
W
M
d
mounting torque
0.4...0.6
Nm
Weight
typical
2
g
I
FAV
= 2x15 A
V
RRM
= 45 V
V
F
= 0.57 V
DSSK 28-0045A
V
RSM
V
RRM
Type
V
V
45
45
DSSK 28-0045A
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C; V
R
= V
RRM
0.5
mA
T
VJ
= 125C; V
R
= V
RRM
5
mA
V
F
I
F
= 15 A;
T
VJ
= 125C
0.57
V
I
F
= 15 A;
T
VJ
= 25C
0.67
V
I
F
= 30 A;
T
VJ
= 125C
0.69
V
R
thJC
1.4
K/W
R
thCH
0.5
K/W
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
Power Schottky Rectifier
with common cathode
TO-220 AB
C (TAB)
A
C
A
A = Anode, C = Cathode , TAB = Cathode
Features
International standard package
Very low V
F
Extremely low switching losses
Low I
RM
-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions see Outlines.pdf
A
C
A
2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
419
007
DSSK 28-0045A
0.0
0.2
0.4
0.6
0.8
1.0
1
10
100
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
5
15
25
35
0
10
20
30
0
5
10
15
20
25
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
0
40
80
120
160
0
5
10
15
20
25
30
35
40
I
F(AV)
T
C
C
I
F(AV)
t
s
K/W
I
FSM
t
P
A
0
10
20
30
40
100
1000
10000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
A
P
(AV)
W
Z
thJC
V
DSSK 28-0045A
A
s
T
VJ
=175C
150C
125C
100C
25C
T
VJ
=
175C
150C
125C
25C
T
VJ
= 25C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
50C
Single Pulse
(Thermal Resistance)
0.08
D=0.5
0.33
0.25
0.17
DC
75C
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode