2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175C
600
V
V
DGR
T
J
= 25
C to 175C; R
GS
= 1 M
600
V
V
GS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
10
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
25
A
I
AR
T
C
= 25
C
10
A
E
AR
T
C
= 25
C
18
mJ
E
AS
T
C
= 25
C
500
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 10
P
D
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
TO-263 package for 10s
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99424(09/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
3.0
5.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
150
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
740
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHV
TM
HiPerFET
Power MOSFET
Advance Technical Information
Features
International standard packages
Fast Intrinsic Diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-263 (IXFA)
TO-220 (IXFP)
D
(TAB)
G
S
G
S
(TAB)
IXFA 10N60P
IXFP 10N60P
V
DSS
= 600 V
I
D25
= 10 A
R
DS(on)
740 m
trr
250 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 10N60P
IXFP 10N60P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
5
11
S
C
iss
1610
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
165
pF
C
rss
14
pF
t
d(on)
23
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
27
n s
t
d(off)
R
G
= 10
(External)
65
ns
t
f
21
ns
Q
g(on)
34
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
12
nC
Q
gd
11
nC
R
thJC
0.62 K/W
R
thCK
(TO-220)
0.25
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
10
A
I
SM
Repetitive
25
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 10 A, -di/dt = 100 A/
s, V
GS
=0V, V
R
=100V
250 ns
Q
RM
0.32
C
t
rr
3
A
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
TO-220 (IXFP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXFA) Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
2005 IXYS All rights reserved
IXFA 10N60P
IXFP 10N60P
Fig. 2. Extended Output Characteristics
@ 25
C
0
3
6
9
12
15
18
21
24
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. Output Characteristics
@ 125
C
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25
C
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 10A
I
D
= 5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
1
2
3
4
5
6
7
8
9
10
11
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
5
10
15
20
25
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 10N60P
IXFP 10N60P
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pac
it
a
n
c
e
-
pic
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 300V
I
D
= 5A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
2
4
6
8
10
12
14
16
3.5
4
4.5
5
5.5
6
6.5
V
G S
- Volts
I
D
- A
m
p
e
re
s
T
J
=125
C
25
C
-40
C
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
5
10
15
20
25
30
35
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
- A
m
p
e
re
s
T
J
= 125
C
T
J
= 25
C
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.10
1.00
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t
h
) J
C
-
C /
W
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