1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
200
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
42N20
42
A
50N20
50
A
58N20
58
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
42N20
168
A
50N20
200
A
58N20
232
A
I
AR
T
C
= 25
C
42N20
42
A
50N20
50
A
58N20
58
A
E
AR
T
C
= 25
C
30
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
m
A
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
V
DSS
I
D25
R
DS(on)
200 V
42 A 60m
W
200 V
50 A 45m
W
200 V
58 A 40m
W
t
rr
200 ns
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface mountable package
High power density
G = Gate,
D = Drain,
S = Source,
TAB = Drain
(TAB)
S
TO-268 (D3) Case Style
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.
91522H (2/98)
(TAB)
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
42N20
0.060
W
50N20
0.045
W
58N20
0.040
W
Pulse test, t
300
m
s, duty cycle d
2 %
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
20
32
S
C
iss
4400
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
800
pF
C
rss
285
pF
t
d(on)
18
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
20
ns
t
d(off)
R
G
= 1
W
(External)
72
90
ns
t
f
16
25
ns
Q
g(on)
190
220
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
35
50
nC
Q
gd
95
110
nC
R
thJC
0.42
K/W
R
thCK
(TO-247 and TO-204 Case styles)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min. Typ.
Max.
I
S
V
GS
= 0 V
42N20
42
A
50N20
50
A
58N20
58
A
I
SM
Repetitive;
42N20
168
A
pulse width limited by T
JM
50N20
200
A
58N20
232
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
T
J
= 25
C
200
ns
T
J
= 125
C
300
ns
Q
RM
T
J
= 25
C
1.5
m
C
T
J
= 125
C
2.6
m
C
I
RM
T
J
= 25
C
19
A
T
J
= 125
C
23
A
I
F
= 25A,
-di/dt = 100 A/
m
s,
V
R
= 100 V
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AE (IXFM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
- 22.22
- 0.875
C
6.40 11.40
0.252 0.449
D
1.45
1.60
0.057 0.063
E
1.52
3.43
0.060 0.135
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 26.66
0.991 1.050
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Min. Recommended Footprint
TO-268AA (D
3
PAK)
IXFH/IXFM42N20
IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20
IXFT58N20
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
IXFH/IXFM42N20
IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20
IXFT58N20
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
- No
rm
a
liz
e
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
BV
DSS
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
Am
per
es
0
10
20
30
40
50
60
70
80
58N20
42N20
50N20
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
25
50
75
100
125
150
175
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
10
20
30
40
50
60
70
80
90
100
6V
5V
T
J
= 25C
V
GS
= 15V
V
GS
= 10V
I
D
= 25A
V
GS
= 10V
9V
8V
7V
T
J
= 25C
4 - 4
2000 IXYS All rights reserved
IXFH/IXFM42N20
IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20
IXFT58N20
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
V
DS
- Volts
1
10
100
I
D
-
A
m
p
e
re
s
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
GE
-
V
o
lt
s
0
2
4
6
8
10
12
14
V
SD
- Volts
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
V
DS
- Volts
0
5
10
15
20
25
C
apa
ci
t
anc
e -
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
h
erm
a
l
R
e
sp
on
se
-
K
/
W
0.001
0.01
0.1
Single Pulse
D=0.1
D=0.5
C
rss
C
oss
C
iss
200
Limited by R
DS(on)
10s
100ms
100s
10ms
1ms
V
DS
= 100V
I
D
= 50A
I
G
= 10mA
T
J
= 125C
T
J
= 25C
D=0.01
D=0.02
D=0.05
D=0.2
f = 1MHz
V
DS
= 25V
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