1999 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
21N50
21
A
24N50
24
A
26N50
26
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
21N50
84
A
24N50
96
A
26N50
104
A
I
AR
T
C
= 25
C
21N50
21
A
24N50
24
A
26N50
26
A
E
AR
T
C
= 25
C
30
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
V/
n
s
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
A
V
GS
= 0 V
T
J
= 125
C
1 mA
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface mountable package
High power density
G = Gate,
D = Drain,
S = Source,
TAB = Drain
91525H (9/99)
(TAB)
V
DSS
I
D25
R
DS(on)
IXFH/IXFM21N50
500 V 21 A 0.25
IXFH/IXFM/IXFT24N50
500 V 24 A 0.23
IXFH/IXFT26N50
500 V 26 A 0.20
t
rr
250 ns
HiPerFET
TM
Power MOSFETs
TO-268 (D3) Case Style
(TAB)
G
S
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
21N50
0.25
24N50
0.23
26N50
0.20
Pulse test, t
300
s, duty cycle
d
2 %
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
11
21
S
C
iss
4200
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
450
pF
C
rss
135
pF
t
d(on)
16
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
33
45
ns
t
d(off)
R
G
= 2
(External)
65
80
ns
t
f
30
40
ns
Q
g(on)
135
160
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
28
40
nC
Q
gd
62
85
nC
R
thJC
0.42 K/W
R
thCK
(TO-247 Case Style)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ. Max.
I
S
V
GS
= 0 V
21N50
21
A
24N50
24
A
26N50
26
A
I
SM
Repetitive;
21N50
84
A
pulse width limited by T
JM
24N50
96
A
26N50
104
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle
d
2 %
t
rr
T
J
= 25
C
250
ns
T
J
= 125
C
400
ns
Q
RM
T
J
= 25
C
1
C
T
J
= 125
C
2
C
I
RM
T
J
= 25
C
10
A
T
J
= 125
C
15
A
I
F
= I
S
-di/dt = 100 A/
s,
V
R
= 100 V
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
6.4
11.4
.250
.450
A1
1.53
3.42
.060
.135
b
1.45
1.60
.057
.063
D
22.22
.875
e
10.67
11.17
.420
.440
e1
5.21
5.71
.205
.225
L
11.18
12.19
.440
.480
p
3.84
4.19
.151
.165
p1
3.84
4.19
.151
.165
q
30.15 BSC
1.187 BSC
R
12.58
13.33
.495
.525
R1
3.33
4.77
.131
.188
s
16.64
17.14
.655
.675
TO-204 AE (IXFM) Outline
Pins: 1 - Gate, 2 - Source, Case - Drain
TO-247 AD (IXFH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Min. Recommended Footprint
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242
BSC
IXFH21N50
IXFH24N50
IXFH26N50
IXFM21N50
IXFM24N50
IXFM26N50
IXFT24N50
IXFT26N50
1999 IXYS All rights reserved
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
T
J
- Degrees C
-50 -25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
- N
o
r
m
a
lize
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
DSS
V
GS(th)
T
C
- Degrees C
-50 -25
0
25
50
75
100 125 150
I
D
-
Am
per
es
0
5
10
15
20
25
30
T
J
- Degrees C
-50 -25
0
25
50
75
100 125 150
R
DS
(on)
- No
rm
a
l
iz
e
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
5
10 15 20 25 30 35 40 45 50
R
DS
(on)
- No
rm
a
l
iz
e
d
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
5
10
15
20
25
30
35
40
45
50
T
J
= 25C
V
DS
= 10V
V
DS
- Volts
0
5
10
15
20
25
30
35
I
D
-
Am
per
es
0
5
10
15
20
25
30
35
40
45
50
6V
5V
T
J
= 25C
V
GS
= 10V
V
GS
= 15V
I
D
= 12A
21N50
24N50
26N50
T
J
= 25C
V
GS
= 10V
7V
IXFH21N50
IXFH24N50
IXFH26N50
IXFM21N50
IXFM24N50
IXFM26N50
IXFT24N50
IXFT26N50
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig.7
Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.9
Capacitance Curves
Fig.10 Source Current vs. Source to Drain Voltage
Fig.11 Transient Thermal Impedance
V
DS
- Volts
1
10
100
I
D
-
Am
per
es
0.1
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
GE
- V
o
lts
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
D
-
Am
per
es
0
5
10
15
20
25
30
35
40
45
50
V
DS
- Volts
0
5
10
15
20
25
C
apaci
t
ance -
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Ther
m
a
l
R
e
s
ponse -
K
/
W
0.001
0.01
0.1
1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse
C
rss
C
oss
V
DS
= 250V
I
D
= 12.5A
I
G
= 10mA
500
10s
100s
1ms
10ms
100ms
Limited by R
DS(on)
C
iss
T
J
= 25C
T
J
= 125C
f = 1 Mhz
V
DS
= 25V
IXFH21N50
IXFH24N50
IXFH26N50
IXFM21N50
IXFM24N50
IXFM26N50
IXFT24N50
IXFT26N50
PDF 
ZIP