2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
900
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
900
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
12
A
I
DM
T
C
= 25
C,
48
A
pulse width limited by T
JM
I
AR
T
C
= 25
C
12
A
E
AR
T
C
= 25
C
30
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5 V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
C
M
d
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
F
c
Mounting Force (PLUS 247)
20...120/4.5...27N/lbs
Weight
TO-247, PLUS 247
6
g
TO-268
4
g
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
900
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
50
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.9
Pulse test, t
300
s, duty cycle d
2 %
98572A(04/03)
TO-247 AD (IXFH)
G = Gate
D = Drain
S = Source
TAB = Drain
HiPerFET
TM
Power MOSFETs
Q Class
Preliminary data sheet
V
DSS
= 900 V
I
D25
= 12 A
R
DS(on)
= 0.9
t
rr
200 ns
IXFH 12N90Q
IXFT 12N90Q
IXFX 12N90Q
TO-268 (D3) ( IXFT)
G
S
PLUS 247 (IXFX)
G
D
(TAB)
(TAB)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
6
10
S
C
iss
2900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
315
pF
C
rss
50
pF
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
23
ns
t
d(off)
R
G
= 2
(External),
40
ns
t
f
15
ns
Q
g(on)
90
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30
nC
Q
gd
40
nC
R
thJC
0.42
K/W
R
thCK
(TO-247)
0.25
K/W
(PLUS 247)
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
12
A
I
SM
Repetitive; pulse width limited by T
JM
48
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.3
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
200
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
0.6
C
I
RM
7
A
TO-268 (D3) (IXFT) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
IXFH 12N90Q IXFT 12N90Q
IXFX 12N90Q
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
PLUS-247 (IXFX) Outline
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