2004 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 150
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
18
m
V
GS
= 15 V, I
D
= 140A
14
m
Pulse test, t
300
s, duty cycle d
2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175
C
200
V
V
DGR
T
J
= 25
C to 175
C; R
GS
= 1 M
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
140
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
280
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
100
mJ
E
AS
T
C
= 25
C
4
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 4
P
D
T
C
= 25
C
800
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
M
d
Terminal torque
1.13/10 Nm/lb.in.
Mounting torque
1.13/10 Nm/lb.in.
Weight
30
g
G = Gate
D = Drain
S = Source
DS99245(12/04)
PolarHT
TM
HiPerFET
Power MOSFET
IXFN 140N20P
Advanced Technical Information
N-Channel Enhancement Mode
Fast Intrinsic Diode
Features
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
V
DSS
= 200
V
I
D25
= 140
A
R
DS(on)
= 18 m
t
rr
150 ns
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 140N20P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
50
84
S
C
iss
7500
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1800
pF
C
rss
280
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
35
ns
t
d(off)
R
G
= 3.3
(External)
150
ns
t
f
90
ns
Q
g(on)
240
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50
nC
Q
gd
100
nC
R
thJC
0.18 K/W
R
thCK
0.05
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
140
A
I
SM
Repetitive
280
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 25 A
150 ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
0.6
C
SOT-227B miniBLOC
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
2004 IXYS All rights reserved
IXFN 140N20P
Fig. 2. Extended Output Characteristics
@ 25
C
0
30
60
90
120
150
180
210
240
270
300
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
20
40
60
80
100
120
140
0
0.5
1
1.5
2
2.5
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S
(
o
n
)
-
N
o
rm
a
l
i
z
e
d
I
D
= 140A
I
D
= 70A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
0
50
100
150
200
250
300
I
D
- Amperes
R
D
S
(
o n )
-
N
o
r
m
a
liz
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 140N20P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
a
pac
i
t
anc
e -
pi
c
o
F
a
r
a
ds
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150 175 200 225 250
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 100V
I
D
= 70A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
25
50
75
100
125
150
175
200
225
4
4.5
5
5.5
6
6.5
7
7.5
8
V
G S
- Volts
I
D
-
A
m
p
e
re
s
T
J
= 150
C
25
C
-40
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0
40
80
120
160
200
240
I
D
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4
0.6
0.8
1
1.2
1.4
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
re
s
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2004 IXYS All rights reserved
IXFN 140N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0 . 0 0
0 . 0 1
0 . 1 0
1 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
C
/ W
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