1 - 2
2000 IXYS All rights reserved
Features
International standard packages
miniBLOC,
with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
200
V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
m
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
10 m
W
Pulse test, t
300
m
s,
duty cycle d
2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
200
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C, Chip capability
180
A
I
L(RMS)
Terminal current limit
100
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
720
A
I
AR
T
C
= 25
C
36
A
E
AR
T
C
= 25
C
64
mJ
E
AS
T
C
= 25
C
4
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
700
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13
Nm/lb.in.
Terminal connection torque
1.5/13
Nm/lb.in.
Weight
30
g
98551B (7/00)
D
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 180N20
V
DSS
= 200 V
I
D25
= 180 A
R
DS(on)
= 10 m
W
t
rr
< 250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
2 - 2
2000 IXYS All rights reserved
IXFN 180N20
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= 60A, pulse test
90
130
S
C
iss
22000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3800
pF
C
rss
600
pF
t
d(on)
55
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
85
ns
t
d(off)
R
G
= 1
W
(External),
180
ns
t
f
56
ns
Q
g(on)
660
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
120
nC
Q
gd
270
nC
R
thJC
0.18
K/W
R
thCK
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
180
A
I
SM
Repetitive;
720
A
pulse width limited by T
JM
V
SD
I
F
= 100A, V
GS
= 0 V,
1.2
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
I
F
= 50A, -di/dt = 100 A/
m
s, V
R
= 100 V T
J
= 25
C
250
ns
Q
RM
T
J
= 25
C 1.5
m
C
I
RM
10
A
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
miniBLOC, SOT-227 B
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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