=OMMM=fuvp=^==
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
International standard package
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
G = Gate
D = Drain
S = Source
b=p=~=~=_il`=~==
~=j~==h=p
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
3.0
5.0
V
I
GSS
V
GS
=
20V, V
GS
= 0V
100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 I
D25
23N100
0.43
Note 2
24N100
0.39
VURVTa= ENMLMMF
HiPerFET
TM
Power MOSFET
Single MOSFET Die
Symbol Test Conditions
Maximum Ratings
V
DSS
T
J
= 25C to 150C
1000
V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M
1000
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
24N100
24
A
23N100
23
A
I
DM
T
C
= 25
C; Note 1
24N100
96 A
23N100
92
A
I
AR
T
C
= 25
C
24 A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
5 V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
600
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque
1.5/13 Nm/lb.in.
Weight
30
g
Preliminary data sheet
V
DSS
I
D25
R
DS(on)
IXFN 24N100 1000 V 24 A
0.39
IXFN 23N100 1000 V 23 A
0.43
t
250 ns
fuvp=jlpcbqp=~=fd_q=~=========rKpK=~W
QIUPRIRVO
QIUUNINMS
RIMNTIRMU
RIMQVIVSN
RINUTINNT
RIQUSITNR
QIURMIMTO
QIVPNIUQQ
RIMPQITVS
RIMSPIPMT
RIOPTIQUN
RIPUNIMOR
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 2
15
22
S
C
iss
7000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
750
pF
C
rss
260
pF
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
35
ns
t
d(off)
R
G
= 1
(External),
75
ns
t
f
21
ns
Q
g(on)
250
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
55
nC
Q
gd
135
nC
R
thJC
0.21
K/W
R
thCK
0.05
K/W
Source-Drain Diode
(T
J
= 25
C, unless otherwise specified)
Characteristic Values
Symbol
Test Conditions
Min.
Typ. Max.
I
S
V
GS
= 0
=
24N100
24
A
23N100
23
A
I
SM
Repetitive;
24N100
96
A
pulse width limited by T
JM
OPkNMM
92
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
250
n s
Q
RM
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
1.0
C
I
RM
8
A
M4 screws (4x) supplied
aK
j
f
jK
j~K
jK
j~K
^
PNKRM
PNKUU
NKOQM
NKORR
_
TKUM
UKOM
MKPMT
MKPOP
`
QKMV
QKOV
MKNSN
MKNSV
a
QKMV
QKOV
MKNSN
MKNSV
b
QKMV
QKOV
MKNSN
MKNSV
c
NQKVN
NRKNN
MKRUT
MKRVR
dPMKNO
PMKPM
NKNUS
NKNVP
e
PUKMM
PUKOP
NKQVS
NKRMR
g
NNKSU
NOKOO
MKQSM
MKQUN
h
UKVO
VKSM
MKPRN
MKPTU
i
MKTS
MKUQ
MKMPM
MKMPP
j
NOKSM
NOKUR
MKQVS
MKRMS
k
ORKNR
ORKQO
MKVVM
NKMMN
l
NKVU
OKNP
MKMTU
MKMUQ
m
QKVR
RKVT
MKNVR
MKOPR
n
OSKRQ
OSKVM
NKMQR
NKMRV
o
PKVQ
QKQO
MKNRR
MKNTQ
p
QKTO
QKUR
MKNUS
MKNVN
q
OQKRV
ORKMT
MKVSU
MKVUT
r
JMKMR
MKN
JMKMMO
MKMMQ
miniBLOC, SOT-227 B
kW=NK=m====q
gjK
2. Pulse test, t
300 ms, duty cycle d
2 %
K
IXFN 23N100
IXFN 24N100
=OMMM=fuvp=^==
V
DS
- Volts
0
2
4
6
8
10
I
D
- Am
p
e
r
e
s
0
5
10
15
20
V
DS
- Volts
0
4
8
12
16
20
I
D
- Amp
e
r
e
s
0
4
8
12
16
20
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N
)
-
No
rm
a
lize
d
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
GS
- Volts
3
4
5
6
7
8
I
D
- Amp
e
r
e
s
0
5
10
15
20
V
CE
- Volts
0
5
10
15
20
25
I
D
- Amp
e
r
e
s
0
10
20
30
40
50
6V
5V
VGS = 8-10V
TJ = 25C
VGS = 10V
9V
8V
TJ = 25C
5V
TJ = 125C
6V
7V
5V
6V
VGS = 10V
9V
8V
T
J
= 125
O
C
VGS = 10V
ID = 24A
ID = 12A
T
J
= 25
O
C
7V
7V
Figure 1. Output Characteristics at 25
O
C
Figure 2. Extended Output Characteristics at 125
O
C
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
Figure 5. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
Figure 4. Admittance Curves
IXFN 23N100
IXFN 24N100
fuvp=jlpcbqp=~=fd_q=~=========rKpK=~W
QIUPRIRVO
QIUUNINMS
RIMNTIRMU
RIMQVIVSN
RINUTINNT
RIQUSITNR
QIURMIMTO
QIVPNIUQQ
RIMPQITVS
RIMSPIPMT
RIOPTIQUN
RIPUNIMOR
IXYS reserves the right to change limits, test conditions, and dimensions.
V
SD
- Volts
0.0
0.5
1.0
1.5
2.0
2.5
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
Case Temperature -
o
C
-50
-25
0
25
50
75
100
125
150
I
D
- A
m
p
e
r
e
s
0
5
10
15
20
25
30
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(
t
h
)
JC
- K
/
W
0.001
0.010
0.100
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
a
p
a
c
i
tan
ce - p
F
100
1000
10000
Gate Charge - nC
0
50
100
150
200
250
300
350
V
GS
-
V
o
lt
s
0
3
6
9
12
15
Crss
Coss
Ciss
VDS = 500 V
ID = 12 A
IG = 10 mA
f = 1MHz
TJ = 125oC
TJ = 25oC
0.300
20000
Figure 6. Gate Charge
Figure 7. Capacitance Curves
Figure 8. Forward Voltage Drop of the Intrinsic Diode
Figure9. Drain Current vs. Case Temperature
Figure 10. Transient Thermal Resistance
IXFN 23N100
IXFN 24N100
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