1 - 5
2000 IXYS All rights reserved
3
4
1
2
3
4
2
1
CASE
DIODE
HiPerFET MOSFET
IXYS reserves the right to change limits, test conditions, and dimensions.
96535B (7/00)
Buck & Boost Configurations for
PFC & Motor Control Circuits
V
DSS
I
D (cont)
R
DS(on)
t
rr
500 V
44 A
0.12
W
35 ns
500 V
48 A
0.10
W
35 ns
IXFN44N50U2 IXFN44N50U3
IXFN48N50U2 IXFN48N50U3
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
44N50
44
A
48N50
48
A
I
DM
T
C
= 25
C,
44N50
176
A
pulse width limited by max. T
JM
48N50
192
A
I
AR
T
C
= 25
C
24
A
E
AR
Repetitive
30
mJ
dv/dt
I
S
I
DM
, -di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
520
W
V
RRM
600
V
I
FAVM
T
C
= 70
C; rectangular, d = 0.5
60
A
I
FRM
tp <10
m
s; pulse width limited by T
J
800
A
P
D
T
C
= 25
C
180
W
T
J
-40 ... +150
C
T
JM
150
C
T
stg
-40 ... +150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13
Nm/lb.in.
Terminal connection torque (M4)
1.5/13
Nm/lb.in.
Weight
30
g
miniBLOC, SOT-227 B
2
1
4
3
Features
Popular Buck & Boost circuit
topologies
International standard package
miniBLOC SOT-227B
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<60 pF)
- reduced RFI
Ultra-fast FRED diode with soft
reverse recovery
Applications
Power factor controls and buck
regulators
DC servo and robotic drives
DC choppers
Switch reluctance motor controls
Advantages
Easy to mount with 2 screws
Space savings
Tightly coupled FRED
HiPerFET
TM
Power MOSFETs
Preliminary data
2 - 5
2000 IXYS All rights reserved
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
miniBLOC, SOT-227 B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
400
m
A
V
GS
= 0 V
T
J
= 125
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
44N50
0.12
W
48N50
0.10
W
Pulse test, t
300
m
s, duty cycle
d
2 %
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V, I
D
= 0.5 I
D25
, pulse test
22
42
S
C
iss
8400
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
900
pF
C
rss
280
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60
ns
t
d(off)
R
G
= 1
W
(External)
100
ns
t
f
30
ns
Q
g(on)
270
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60
nC
Q
gd
135
nC
R
thJC
0.24
K/W
R
thCK
0.05
K/W
Ultra-fast Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
R
T
J
= 25
C; V
R
= V
RRM
200
m
A
V
R
= 0.8V
RRM
100
m
A
T
J
= 125
C; V
R
= 0.8V
RRM
14 mA
V
F
I
F
= 70A, V
GS
= 0 V, T
J
= 150
C
1.5
V
Pulse test, t
300
m
s, duty cycle
d
2 % T
J
= 25
C
1.8
V
t
rr
I
I
= 1A, di/dt = -200 A/
m
s, V
R
= 30 V, T
J
= 25
C
35
50
ns
I
RM
I
F
= 60A, di/dt = -480 A/
m
s, V
R
= 350 V, T
J
= 100
C
19 21
A
R
thJC
0.7 K/W
R
thJK
0.05
K/W
IXFN44N50U2
IXFN48N50U2
IXFN44N50U3
IXFN48N50U3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 5
2000 IXYS All rights reserved
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
Fig.1 Output Characteristics
Fig.2 Input Admittance
Fig.5 Drain Current vs.
Fig.6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig.3 R
DS(on)
vs. Drain Current
Fig.4 Temperature Dependence
of Drain to Source Resistance
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
- No
rm
a
l
iz
e
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
DSS
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
Am
per
es
0
10
20
30
40
50
60
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(on)
- N
o
rm
a
l
i
z
e
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
10 20 30 40 50 60 70 80 90 100
R
DS
(on)
- N
o
rm
a
l
i
z
e
d
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
A
m
per
es
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Volts
0
5
10
15
20
25
30
35
I
D
-
A
m
per
es
0
10
20
30
40
50
60
70
80
90
100
5V
6V
7V
V
GS
= 10V
V
GS
= 10V
V
GS
= 15V
I
D
= 24A
44N50
48N50
T
J
= 25C
T
J
= 25C
T
J
= 25C
4 - 5
2000 IXYS All rights reserved
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
Fig.10 Transient Thermal Impedance
V
SD
- Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
D
-
Am
per
es
0
10
20
30
40
50
60
70
80
90
100
Time - Seconds
0.001
0.01
0.1
1
Ther
m
a
l
R
e
s
ponse -
K
/
W
0.01
0.1
V
DS
- Volts
0
5
10
15
20
25
C
a
paci
t
ance -
pF
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
C
rss
C
oss
Gate Charge - nCoulombs
0
50
100 150 200 250 300 350 400
V
GE
- V
o
l
t
s
0
1
2
3
4
5
6
7
8
9
10
C
iss
V
DS
= 250V
I
D
= 24A
I
G
= 10mA
f = 1 MHz
V
DS
= 25V
T
J
= 125C
T
J
= 25C
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
5 - 5
2000 IXYS All rights reserved
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
Fig. 11. Forward voltage drop.
Fig. 12. Recovery charge versus -di
F
/dt.
Fig. 13. Peak reverse current vs. -di
F
/dt.
Fig. 14. Dynamic parameters versus
Fig. 15. Recovery time versus -di
F
/dt.
Fig. 16. Peak forward voltage and forward
junction temperature.
recovery time vs. di
F
/dt.
Fig. 17. Transient thermal impedance junction to case.
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