2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
26N50Q
24
A
24N50Q
22
A
I
DM
T
C
= 25
C, Pulse width limited by T
JM
26N50Q
104
A
24N50Q
96
A
I
AR
T
C
= 25
C
26N50Q
26
A
24N50Q
24
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
250
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250uA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2.5
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
26N50Q
0.20
Notes 1 & 2
24N50Q
0.23
G
D
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<35pF)
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly: no screws, or isolation
foils required
l
Space savings
l
High power density
l
Low collector capacitance to ground
(low EMI)
G = Gate
D = Drain
S = Source
* Patent pending
Isolated back surface*
V
DSS
I
D25
R
DS(on)
IXFR 26N50Q
500 V
24 A
0.20
IXFR 24N50Q
500 V
22 A
0.23
t
rr
250 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt,
Low t
rr
, HDMOS
TM
Family
ISOPLUS 247
TM
E153432
98664A (5/01)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= I
T
Note 1
14
24
S
C
iss
3900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
500
pF
C
rss
130
pF
t
d(on)
28
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
30
ns
t
d(off)
R
G
= 1
(External),
55
ns
t
f
16
ns
Q
g(on)
95
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
27
nC
Q
gd
40
nC
R
thJC
0.50
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive; pulse width limited by T
JM
104
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.3
V
t
rr
T
J
= 25
C
250
ns
Q
RM
T
J
= 25
C
0.85
1.5
C
I
RM
T
J
= 25
C
8
A
I
F
= I
s
, -di/dt = 100 A/
s,
V
R
= 100 V
Note: 1. Pulse test, t
300
s, duty cycle d
2 %
2. I
T
test current:
IXFR26N50Q
I
T
= 13A
IXFR24N50Q
I
T
= 12A
3. See IXFH26N50Q data sheet for characteristic curves.
IXFR 24N50Q
IXFR 26N50Q
ISOPLUS 247 OUTLINE
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