2004 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99210(9/04)
Polar
TM
HiPerFET
Power MOSFET
Advanced Technical Information
N-Channel Enhancement Mode
Fast recovery intrinsic diode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
TO-268 (IXFT)
G
S
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
3.0
5.0
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 175
C
1000
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
17
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175C
150
V
V
DGR
T
J
= 25
C to 10C; R
GS
= 1 M
150
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
120
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
300
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
50
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
175C, R
G
= 4
P
D
T
C
= 25
C
600
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +175
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Weight
TO-247
5.5
g
TO-268
5.0
g
G
D S
TO-247AD (IXFH)
V
DSS
= 150
V
I
D25
= 120
A
R
DS(on)
17 m
t
rr
200 ns
IXFH 120N15P
IXFT 120N15P
D (TAB)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 120N15P
IXFT 120N15P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
40
60
S
C
iss
4950
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1300
pF
C
rss
330
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
33
ns
t
d(off)
R
G
= 4
(External)
75
ns
t
f
30
ns
Q
g(on)
150
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
34
nC
Q
gd
77
nC
R
thJC
0.25
K/W
R
thCK
(TO-247)
0.21
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
120
A
I
SM
Repetitive
300
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
T
rr
I
F
= 25A
-di/dt = 100 A/
s
V
R
= 100V
Q
RM
100
600
ns
nC
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
200
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
I
AR
6
A
2004 IXYS All rights reserved
IXFH 120N15P
IXFT 120N15P
Fig. 2. Extended Output Characteristics
@ 25
C
0
30
60
90
120
150
180
210
240
270
300
0
1
2
3
4
5
6
7
8
9
10 11 12
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
7V
6V
8V
9V
5V
Fig. 3. Output Characteristics
@ 150
C
0
20
40
60
80
100
120
0
1
2
3
4
5
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
20
40
60
80
100
120
0
0.5
1
1.5
2
2.5
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100 125 150 175
T
J
- Degrees Centigrade
R
D S
(
o
n
)
-
N
o
r
m
aliz
ed
I
D
= 120A
I
D
= 60A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
20
40
60
80
100
120
-50
-25
0
25
50
75
100 125 150 175
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
0
30
60
90
120 150 180 210 240 270 300
I
D
- Amperes
R
D S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 120N15P
IXFT 120N15P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
a
p
a
c
i
t
anc
e -
p
i
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
15
30
45
60
75
90 105 120 135 150
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 75V
I
D
= 60A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
30
60
90
120
150
180
210
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V
G S
- Volts
I
D
-
A
m
per
e
s
T
J
= 150
C
25
C
-40
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0
30
60
90
120
150
180
210
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
30
60
90
120
150
180
210
240
270
300
330
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
re
s
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2004 IXYS All rights reserved
IXFH 120N15P
IXFT 120N15P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0 . 0 1
0 . 1 0
1 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
C
/ W
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