2004 IXYS All rights reserved
98718B(02/04)
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
21
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
84
A
I
AR
T
C
= 25
C
21
A
E
AR
T
C
= 25
C
30
mJ
E
AS
1.5
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
15 V/ns
T
J
150C, R
G
= 2
P
D
T
C
= 25
C
280
W
T
J
-55 to +150
C
T
JM
150
C
T
stg
-55 to +150
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 6
g
TO-268 4
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
l
IXYS advanced low Q
g
process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
DS (on)
l
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.25
Pulse test, t
300 s, duty cycle d 2 %
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
V
DSS
= 500 V
I
D25
= 21 A
R
DS(on)
= 0.25
t
rr
250 ns
IXFH 21N50Q
IXFT 21N50Q
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 21N50Q
IXFT 21N50Q
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
14
21
S
C
iss
3000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
420
pF
C
rss
110
pF
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
28
ns
t
d(off)
R
G
= 2.0
(External),
51
ns
t
f
12
ns
Q
g(on)
84
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
nC
Q
gd
35
nC
R
thJC
0.45
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
21
A
I
SM
Repetitive; pulse width limited by T
JM
84
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.3
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
250
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
0.85
C
I
RM
8
A
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
2004 IXYS All rights reserved
98718B(02/04)
IXFH 21N50Q
IXFT 21N50Q
Fig. 2. Extended Output Characteristics
@ 25
C
0
5
10
15
20
25
30
35
40
45
50
55
60
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
5.5V
5V
6.5V
6V
Fig. 3. Output Characteristics
@ 125
C
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
12
14
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
6V
5V
4.5V
5.5V
Fig. 1. Output Characteristics
@ 25
C
0
2
4
6
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
5V
4.5V
5.5V
6V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 21A
I
D
= 10.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
3
6
9
12
15
18
21
24
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0
5
10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
R
D S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 21N50Q
IXFT 21N50Q
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
p
a
c
i
t
a
nc
e -
pic
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
90
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 10.5A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
3.5
4
4.5
5
5.5
6
6.5
V
G S
- Volts
I
D
- A
m
p
e
re
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
I
D
- Amperes
g
f s
- S
i
e
m
e
n
s
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
- A
m
p
e
re
s
T
J
= 125C
T
J
= 25C
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds
R
(
t
h
)
J
C
-
C
/
W
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