2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
600
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
26
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
104
A
I
AR
T
C
= 25
C
26
A
E
AR
T
C
= 25
C
45
mJ
E
AS
T
C
= 25
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
360
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
TO-247
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
l
Low gate charge
l
International standard packages
l
Epoxy
meet
UL
94
V-0, flammability
classification
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Avalanche energy and current rated
l
Fast intrinsic Rectifier
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.25
Pulse test, t
300
s, duty cycle d
2 %
G = Gate
D = Drain
S = Source
TAB = Drain
98635D (6/02)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
IXFH 26N60Q
IXFT 26N60Q
V
DSS
= 600 V
I
D25
= 26 A
R
DS(on)
= 0.25
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
14
22
S
C
iss
5100
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
560
pF
C
rss
210
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32
ns
t
d(off)
R
G
= 2.0
(External),
80
ns
t
f
16
ns
Q
g(on)
150
200
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
34
nC
Q
gd
80
nC
R
thJC
0.35
K/W
R
thCK
TO-247
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive; pulse width limited by T
JM
104
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle
d
2 %
t
rr
250 ns
Q
RM
1
C
I
RM
10
A
I
F
= I
S
-di/dt = 100 A/
s, V
R
= 100 V
IXFH 26N60Q
IXFT 26N60Q
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
PDF 
ZIP