1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
30N50
30
A
32N50
32
A
I
DM
T
C
= 25
C
30N50
120
A
pulse width limited by T
JM
32N50
128
A
I
AR
T
C
= 25
C
30N50
30
A
32N50
32
A
E
AS
T
C
= 25
C
1.5
J
E
AR
I
D
= 25
C
45
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
360
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
500
V
V
DSS
temperature coefficient
0.102
%/K
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2
4
V
V
GS(th)
temperature coefficient
-0.206
%/K
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
200
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 15A
32N50
0.15
W
30N50
0.16
W
Pulse test, t
300
m
s, duty cycle d
2 %
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
G = Gate,
D = Drain,
S = Source,
TAB = Drain
97518H (6/99)
V
DSS
I
D25
R
DS(on)
500 V
30 A
0.16
W
500 V
32 A
0.15
W
t
rr
250 ns
IXFH/IXFT 30N50
IXFH/IXFT 32N50
D (TAB)
TO-268 (D3) Case Style
(TAB)
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min. typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
18
28
S
C
iss
5200
5700
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
750
pF
C
rss
240
310
pF
t
d(on)
35
45
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
42
50
ns
t
d(off)
R
G
= 2
W
(External)
110
140
ns
t
f
26
35
ns
Q
g(on)
227
300
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
29
40
nC
Q
gd
110
145
nC
R
thJC
0.35
K/W
R
thCK
(TO-247 Case Style)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
30N50
30
A
32N50
32
A
I
SM
Repetitive;
30N50
120
A
pulse width limited by T
JM
32N50
128
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
T
J
= 25
C
250
ns
T
J
= 125
C
400
ns
Q
RM
T
J
= 25
C
0.85
m
C
T
J
= 25
C
I
RM
8
A
I
F
= I
S
-di/dt = 100 A/
m
s,
V
R
= 100 V
IXFH 30N50
IXFH 32N50
IXFT 30N50
IXFT 32N50
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
TO-268AA (D
3
PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75
100 125 150
I
D
-
A
m
peres
0
8
16
24
32
40
V
GS
- Volts
0
2
4
6
8
I
D
-
A
m
p
e
res
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N)
-
N
o
r
m
ali
z
ed
0.8
1.2
1.6
2.0
2.4
2.8
I
D
= 16A
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
p
e
res
0
10
20
30
40
50
60
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
p
e
res
0
10
20
30
40
50
60
70
80
5V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
T
J
= 125
o
C
6V
5V
6V
IXFH30N50
IXFH32N50
V
GS
=10V
9V
8V
7V
V
GS
=10V
9V
8V
7V
I
D
= 32A
T
J
= 25
o
C
I
D
- Amperes
0
10
20
30
40
50
60
R
DS
(O
N
)
-
N
o
r
m
a
l
iz
ed
0.8
1.2
1.6
2.0
2.4
2.8
Tj=125
0
C
Tj=25
0
C
V
GS
= 10V
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
IXFH 30N50
IXFH 32N50
IXFT 30N50
IXFT 32N50
4 - 4
2000 IXYS All rights reserved
Pulse Width - Seconds
10
-3
10
-2
10
-1
10
0
10
1
R(t
h
)
JC
- K/W
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.00
0.40
V
DS
- Volts
0
5
10
15
20
25
C
a
pa
cita
nc
e - p
F
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Crss
Coss
Ciss
V
SD
- Volts
0.4
0.6
0.8
1.0
1.2
I
D
- A
m
pe
re
s
0
20
40
60
80
100
T
J
=125
O
C
T
J
=25
O
C
Gate Charge - nC
0
50
100
150
200
250
300
V
GS
- V
o
lts
0
2
4
6
8
10
12
14
Vds=300V
I
D
=30A
I
G
=10mA
F = 1MHz
Crss
Coss
Ciss
V
GS
= 0V
T
J
=25
O
C
Vds=300V
I
D
=30A
I
G
=10mA
F = 1MHz
30
V
DS
- Volts
10
100
I
D
- A
m
p
e
re
s
0.1
1
10
T
C
= 25
O
C
10 ms
1 ms
100 ms
DC
500
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFH 30N50
IXFH 32N50
IXFT 30N50
IXFT 32N50
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