2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
500
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
30N50Q
30
A
32N50Q
32
A
I
DM
T
C
= 25
C,
30N50Q
120
A
pulse width limited by T
JM
32N50Q
128
A
I
AR
T
C
= 25
C
32
A
E
AR
T
C
= 25
C
45
mJ
E
AS
1500
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5 V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C 360
W
T
J
-55 ... + 150
C
T
JM
150
C
T
stg
-55 ... + 150
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight
TO-247 6
g
TO-268 4
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
l
IXYS advanced low Q
g
process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
DS (on)
l
Unclamped Inductive Switching (UIS)
rated
l
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
30N50Q
0.16
Note 1
32N50Q
0.15
98596D (03/01)
TO-247 AD (IXFH)
G = Gate
D = Drain
S = Source
TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
V
DSS
I
D25
R
DS(on)
500 V 30 A 0.16
500 V 32 A 0.15
t
rr
250 ns
IXFH/IXFT 30N50Q
IXFH/IXFT 32N50Q
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1
18
28
S
C
iss
3950 4925
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640 800
pF
C
rss
210 260
pF
t
d(on)
35
45
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
42
50
ns
t
d(off)
R
G
= 2
(External),
75
95
ns
t
f
20
25
ns
Q
g(on)
153 190
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
26
32
nC
Q
gd
85 105
nC
R
thJC
0.35
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
32
A
I
SM
Repetitive; pulse width limited by T
JM
128
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
0.75
C
I
RM
7.5
A
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
Note 1: Pulse test, t
300
s, duty cycle d
2 %
IXFH 30N50Q
IXFH 32N50Q
IXFT 30N50Q
IXFT 32N50Q
2001 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75 100 125 150
I
D
- A
m
pe
re
s
0
8
16
24
32
40
V
GS
- Volts
2
3
4
5
6
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N
)
- N
o
rm
al
ize
d
0.8
1.2
1.6
2.0
2.4
2.8
I
D
= 16A
V
DS
- Volts
0
4
8
12
16
20
I
D
- A
m
pe
res
0
10
20
30
40
50
V
DS
- Volts
0
4
8
12
16
20
I
D
- A
m
pe
re
s
0
10
20
30
40
50
60
70
80
5V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
T
J
= 125
o
C
6V
5V
6V
V
GS
=10V
9V
8V
7V
V
GS
= 9V
8V
7V
I
D
= 32A
T
J
= 25
o
C
I
D
- Amperes
0
10
20
30
40
50
60
R
DS
(O
N)
-
Norm
al
iz
e
d
0.8
1.2
1.6
2.0
2.4
2.8
Tj=125
0
C
Tj=25
0
C
V
GS
= 10V
4V
IXF_32N50Q
IXF_30N50Q
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
IXFH 30N50Q
IXFH 32N50Q
IXFT 30N50Q
IXFT 32N50Q
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
10
-3
10
-2
10
-1
10
0
10
1
R(th
)
JC
- K/
W
0.02
0.04
0.06
0.08
0.20
0.40
0.01
0.10
V
DS
- Volts
0
5
10
15
20
25
C
a
paci
t
a
nce -
pF
100
1000
10000
V
SD
- Volts
0.4
0.6
0.8
1.0
1.2
I
D
-
A
m
p
e
re
s
0
20
40
60
80
100
T
J
=125
O
C
T
J
=25
O
C
Gate Charge - nC
0
50
100
150
200
250
V
GS
-
V
o
lts
0
2
4
6
8
10
12
14
F = 1MHz
Crss
Coss
Ciss
V
GS
= 0V
T
J
=25
O
C
Vds=300V
I
D
=16A
I
G
=10mA
F = 1MHz
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFH 30N50Q
IXFH 32N50Q
IXFT 30N50Q
IXFT 32N50Q
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