1999 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
200
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
58
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
232
A
I
AR
T
C
= 25
C
58
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
TO-247 AD
G = Gate
D = Drain
S = Source
TAB = Drain
(TAB)
98523A (5/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
25
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
40 m
Pulse test, t
300
s, duty cycle d
2 %
Preliminary data sheet
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
g
Features
l
IXYS advanced low Q
g
process
l
International standard packages
l
Low gate charge and capacitance
- easier to drive
- faster switching
l
Low R
DS (on)
l
Unclamped Inductive Switching (UIS)
rated
l
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
IXFH 58N20Q
IXFT 58N20Q
V
DSS
= 200 V
I
D25
=
58 A
R
DS(on)
=
40 mW
t
rr
200 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072 4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
24
34
S
C
iss
3600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
870
pF
C
rss
280
pF
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
40
ns
t
d(off)
R
G
= 1.5
(External)
40
ns
t
f
13
ns
Q
g(on)
98 140
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
25
35
nC
Q
gd
45
70
nC
R
thJC
0.42
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
58
A
I
SM
Repetitive;
232
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
200
ns
Q
RM
I
F
= I
S
-di/dt = 100 A/
s, V
R
= 100 V
0.7
C
I
RM
7
A
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
IXFH 58N20Q
IXFT 58N20Q
TO-268 Outline
Min. Recommended Footprint
Dimensions in mm and inches
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