1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
600
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
44
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
176
A
I
AR
T
C
= 25
C
44
A
E
AR
T
C
= 25
C
60
mJ
E
AS
T
C
= 25
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
560
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
M
d
Mounting torque
TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247
6
g
TO-264
10 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.5
4.5 V
I
GSS
V
GS
=
20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
C
100
m
A
V
GS
= 0 V
T
J
= 125
C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
130 m
W
Note 1
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98611B (7/00)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
IXFX 44N60
V
DSS
= 600 V
IXFK 44N60
I
D25
=
44 A
R
DS(on)
= 130 m
W
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
30
45
S
C
iss
8900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1000
pF
C
rss
330
pF
t
d(on)
40
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50
ns
t
d(off)
R
G
= 1
W
(External),
100
ns
t
f
40
ns
Q
g(on)
330
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60
nC
Q
gd
65
nC
R
thJC
0.22
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
44
A
I
SM
Repetitive;
176
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.3
V
t
rr
250
ns
Q
RM
1.4
m
C
I
RM
8
A
I
F
= 50A,-di/dt = 100 A/
m
s, V
R
= 100 V
Note: 1. Pulse test, t
300
m
s, duty cycle d
2 %
IXFK 44N60
IXFX 44N60
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA (IXFK) Outline
PLUS247
TM
(IXFX) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
I
D
- Amperes
0
20
40
60
80
100
R
DS
(
O
N
)
-
No
rmal
iz
ed
0.8
1.2
1.6
2.0
2.4
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
60
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N
)
-
No
rmal
iz
ed
0.8
1.2
1.6
2.0
2.4
V
GS
- Volts
3.0
3.5
4.0
4.5
5.0
5.5
I
D
- A
m
pe
re
s
0
10
20
30
40
50
60
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
60
V
DS
- Volts
0
4
8
12
16
20
24
I
D
-
A
m
pe
re
s
0
20
40
60
80
V
DS
- Volts
0
4
8
12
16
20
24
I
D
-
A
m
pe
r
e
s
0
20
40
60
80
100
5V
V
GS
= 10V
V
GS
= 10V
9V
8V
7V
6V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
6V
I
D
= 44A
T
J
= 125
o
C
V
GS
= 10V
9V
8V
7V
I
D
= 22A
V
GS
= 10V
V
GS
= 10V
T
J
= 25
O
C
T
J
= 25
o
C
T
J
= 125
O
C
T
J
= 25
O
C
5V
IXFK 44N60
IXFX 44N60
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
4 - 4
2000 IXYS All rights reserved
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
1.2
I
D
-
A
m
p
e
r
e
s
0
20
40
60
80
100
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(t
h
)
JC
-
K
/
W
0.00
0.01
0.10
1.00
V
DS
- Volts
0
5
10
15
20
25
30
35
40
Ca
p
a
ci
t
a
nc
e -
pF
100
1000
10000
Gate Charge - nC
0
50 100 150 200 250 300 350 400
V
GS
- V
o
lts
0
2
4
6
8
10
12
Crss
Coss
Ciss
V
DS
= 300V
I
D
= 30A
I
G
= 10mA
f = 1MHz
T
J
= 125
O
C
T
J
= 25
O
C
IXFK 44N60
IXFX 44N60
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 10. Transient Thermal Resistance
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