1996 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
20
A
I
C90
T
C
= 90
C
10
A
I
CM
T
C
= 25
C, 1 ms
40
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 150
I
CM
= 20
A
(RBSOA)
Clamped inductive load, L = 300
H
@ 0.8 V
CES
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 500
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
260
A
V
GE
= 0 V
T
J
= 125
C
2.5
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
10N60U1
2.5
V
10N60AU1
3.0
V
Features
l
International standard package
JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOS
TM
process
l
Low V
CE(sat)
- for low on-state conduction losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery
Epitaxial Diode FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
TO-247 AD
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
V
CES
I
C25
V
CE(sat)
600 V
20 A
2.5 V
600 V
20 A
3.0 V
IXGH10N60U1
IXGH10N60AU1
Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
Combi Packs
91751G(3/96)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH10N60U1
IXGH10N60AU1
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
4
8
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
750
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
125
pF
C
res
30
pF
Q
g
50
70
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
15
25
nC
Q
gc
25
45
nC
t
d(on)
100
ns
t
ri
200
ns
E
on
0.4
mJ
t
d(off)
600
ns
t
fi
10N60AU1
300
ns
E
off
10N60AU1
0.6
mJ
t
d(on)
100
ns
t
ri
200
ns
E
on
1
mJ
t
d(off)
900
1500
ns
t
fi
10N60U1
570
2000
ns
10N60AU1
360
600
ns
E
off
10N60U1
2.0
mJ
10N60AU1
1.2
mJ
R
thJC
1.25 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247 AD Outline
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.75
V
Pulse test, t
300
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 64 A/
s
2.5
A
t
rr
V
R
= 360 V
T
J
= 100
C
165
ns
I
F
= 1 A; -di/dt = 50 A/
s; V
R
= 30 V T
J
= 25
C
35
50
ns
R
thJC
2.5 K/W
1996 IXYS All rights reserved
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV
/ V
GE
(
t
h
)
-
No
rm
aliz
ed
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
V
C
E(s
a
t
)
- Norm
aliz
e
d
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
V
CE
- Volts
0
1
2
3
4
5
I
C
-
Am
pe
res
0
2
4
6
8
10
12
14
16
18
20
T
J
= 25C
V
GE
=15V
7V
9V
11V
13V
V
GE
- Volts
5
6
7
8
9
10
11
12
13
14
15
V
CE
-
V
olts
0
1
2
3
4
5
6
7
8
9
10
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
C
- A
m
per
es
0
2
4
6
8
10
12
14
16
18
20
V
CE
- Volts
0
2
4
6
8
10
12
14
16
18
20
I
C
-
Am
pe
res
0
10
20
30
40
50
60
70
80
90
100
13V
11V
9V
7V
V
GE
= 15V
T
J
= 25C
I
C
= 5A
I
C
= 10A
I
C
= 20A
I
C
= 20A
I
C
= 10A
I
C
= 5A
V
GE
= 15V
T
J
= - 40C
T
J
= 25C
T
J
=
125C
T
J
= 25C
V
GE(th)
I
C
= 250A
BV
CES
I
C
= 250A
G
N
JNB
Fig. 3 Collector-Emitter Voltage
Fig. 4
Temperature Dependence
vs. Gate-Emitter Voltage
of Output Saturation Voltage
Fig. 1 Saturation Characteristics
Fig. 2
Output Characterstics
V
CE
= 10 V
Fig. 5 Input Admittance
Fig. 6
Temperature Dependence of
Breakdown and Threshold Voltage
IXGH10N60U1
IXGH10N60AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH10N60U1
IXGH10N60AU1
Pulse Width - Seconds
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
T
her
ma
l Re
spo
ns
e -
K/W
0.01
0.10
1.00
D=0.1
D=0.2
I
C
= 10A
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- Am
pe
res
0.01
0.1
1
10
100
V
CE
- Volts
0
5
10
15
20
25
Ca
pac
ita
nce
- p
F
0
100
200
300
400
500
600
700
800
C
res
C
oes
I
G
= 10mA
V
CE
=
480V
T
J
= 125C
dV/dt < 3V/ns
Single Pulse
Total Gate Charge - (nC)
0
10
20
30
40
50
V
GE
- V
olts
1
3
5
7
9
11
13
15
C
ies
f = 1MHz
D=0.05
D=0.02
D=0.01
D=0.5
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
Fig.10 Transient Thermal Impedance
Fig.9 Capacitance Curves
1996 IXYS All rights reserved
di
F
/dt - A/s
0
100
200
300
400
t
rr
- n
ano
se
con
ds
0
100
200
300
400
di
F
/dt - A/s
0
100
200
300
400
I
RM
- A
m
per
es
0
5
10
15
20
25
max
di
F
/dt - A/s
1
10
100
1000
Q
r
- na
no
co
ulo
mb
s
0.0
0.2
0.4
0.6
0.8
1.0
max
T
J
= 100C
V
R
= 350V
I
F
= 8A
T
J
- Degrees C
0
40
80
120
160
N
orm
a
lize
d I
RM
/
Q
r
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q
r
I
RM
di
F
/dt - A/s
0
50
100
150
200
250
300
V
FR
-
V
olts
0
5
10
15
20
25
t
fr
- n
ano
se
co
nds
0
200
400
600
800
1000
t
fr
V
FR
Voltage Drop - Volts
0.0
0.5
1.0
1.5
2.0
2.5
Cu
rren
t -
Am
pe
res
0
5
10
15
20
25
30
35
40
T
J
= 100C
T
J
= 125C
I
F
= 8A
T
J
= 150C
T
J
= 25C
T
J
= 100C
V
R
= 350V
I
F
= 8A
T
J
= 100C
V
R
= 350V
I
F
= 8A
Fig.13 Junction Temperature Dependence
Fig.14
Reverse Recovery Charge
off I
RM
and Q
r
Fig.15 Peak Reverse Recovery Current
Fig.16
Reverse Recovery Time
Fig.11 Maximum Forward Voltage Drop
Fig.12
Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
IXGH10N60U1
IXGH10N60AU1
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