2003 IXYS All rights reserved
DS98986C(05/03)
High Voltage IGBT
IXGH 20N120B
IXGT 20N120B
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
(IXGH)
Features
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
Low switching losses, low V
(sat)
MOS Gate turn-on
- drive simplicity
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5
V
I
CES
V
CE
= V
CES
T
J
= 25
C
50
A
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= 20A, V
GE
= 15 V
2.9
3.4
V
T
J
= 125
C
2.8
3.8
V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150C
1200
V
V
CGR
T
J
= 25
C to 150C; R
GE
= 1 M
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
40
A
I
C110
T
C
= 110
C
20
A
I
CM
T
C
= 25
C, 1 ms
80
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
I
CM
= 40
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
P
C
T
C
= 25
C
190
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
260
C
M
d
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247 AD
6
g
TO-268
4
g
TO-268
(IXGT)
G
E
C (TAB)
V
CES
= 1200 V
I
C25
=
40 A
V
CE(sat)
= 3.4 V
t
fi(typ)
= 160 ns
Preliminary Data Sheet
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 20A; V
CE
= 10 V,
12
18
S
Pulse test, t
300 s, duty cycle 2 %
C
ies
1700
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
95
pF
C
res
35
pF
Q
g
72
nC
Q
ge
I
C
= 20A, V
GE
= 15 V, V
CE
= 0.5 V
CES
12
nC
Q
gc
27
nC
t
d(on)
25
ns
t
ri
15
ns
t
d(off)
150
280
ns
t
fi
160
320
ns
E
off
2.1
3.5 mJ
t
d(on)
25
ns
t
ri
18
ns
E
on
0.9
mJ
t
d(off)
270
ns
t
fi
360
ns
E
off
3.5
mJ
R
thJC
0.65 K/W
R
thCK
(TO-247)
0.25
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
TO-247 AD Outline
Inductive load, T
J
= 125
C
I
C
= 20A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Inductive load, T
J
= 25
C
I
C
= 20 A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Min Recommended Footprint
IXGH 20N120B
IXGT 20N120B
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
IXGH 20N120B
IXGT 20N120B
2003 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
16
18
V
CE
- Volts
I
C
-
A
m
per
es
V
G E
= 1 5V
9V
1 1V
7V
5V
13V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
CE
- Volts
I
C
-
A
m
per
es
V
G E
= 1 5V
1 3V
1 1 V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
1
1.5
2
2.5
3
3.5
4
4.5
5
V
CE
- Volts
I
C
-
A
m
per
es
V
G E
= 1 5V
1 3V
1 1 V
5V
7V
9V
Fig. 5. Input Admittance
0
10
20
30
40
50
60
70
80
3
4
5
6
7
8
9
10
V
GE
- Volts
I
C
-
A
m
per
es
T
J
= -40C
25C
1 25C
Fig. 6. Transconductance
0
3
6
9
12
15
18
21
24
27
0
10
20
30
40
50
60
70
80
I
C
- Amperes
G
f s
-
S
i
em
ens
T
J
= -40C
25C
1 25C
Fig. 4. Temperature Dependence of V
CE(sat)
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
V
CE
(s
a
t
)
-
N
o
rm
a
l
i
z
e
d
I
C
= 40A
I
C
= 20A
I
C
= 1 0A
V
G E
= 1 5V
IXGH 20N120B
IXGT 20N120B
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
CE
- Volts
C
a
pac
i
t
an
c
e
-
p
F
C
i es
C
oes
C
res
f = 1 M Hz
Fig. 10. Gate Charge
0
3
6
9
12
15
0
10
20
30
40
50
60
70
80
Q
G
- nanoCoulombs
V
GE
- V
o
l
t
s
V
C E
= 600V
I
C
= 20A
I
G
= 1 0mA
Fig. 12. Maximum Transient Thermal
Resistance
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
Fig. 7. Dependence of E
off
on R
G
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
R
G
- Ohms
E
o
ff
-
m
illiJ
o
u
l
es
I
C
= 1 0A
I
C
= 20A
I
C
= 40A
T
J
= 1 25C
V
G E
= 1 5V
V
C E
= 960V
Fig. 8. Dependence of E
off
on I
C
2
4
6
8
10
12
14
10
15
20
25
30
35
40
I
C
- Amperes
E
of
f
-
m
i
l
liJ
o
u
le
s
R
G
= 5 Ohms
R
G
= 50 Ohms
T
J
= 125C
V
G E
= 15V
V
C E
= 960V
Fig. 9. Dependence of E
off
on Temperature
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
E
of
f
-
m
i
l
liJ
o
u
le
s
I
C
= 40A
I
C
= 20A
I
C
= 1 0A
V
G E
= 1 5V
V
C E
= 960V
So lid lines - R
G
= 50 Ohms
Dashed lines - R
G
= 5 Ohms
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