2005 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= 24 A, V
GE
= 15 V
T
J
= 25
C
2.7
V
T
J
= 125
C
1.8
V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150C
600
V
V
CGR
T
J
= 25
C to 150C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C (limited by leads)
70
A
I
C110
T
C
= 110
C
30
A
I
CM
T
C
= 25
C, 1 ms
150
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
I
CM
= 60
A
(RBSOA)
Clamped inductive load @
600 V
P
C
T
C
= 25
C
190
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
250
C
M
d
Mounting torque (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
DS99169A(01/05)
Features
Very high frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speed for high
frequency aaplications
High power surface mountable
package
V
CES
= 600 V
I
C25
= 70 A
V
CE(sat)
= 2.7 V
t
fi
typ
= 32 ns
HiPerFAST
TM
IGBT
with Diode
C2-Class High Speed IGBTs
IXGH 30N60C2D1
IXGT 30N60C2D1
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
C (TAB)
G
C
E
TO-247 AD (IXGH)
TO-268 (IXGT)
G
E
C (TAB)
IXGH 30N60C2D1
IXGT 30N60C2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 24 A; V
CE
= 10 V,
18
28
S
Pulse test, t
300 s, duty cycle 2 %
C
ies
1430
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
140
pF
C
res
40
pF
Q
g
70
nC
Q
ge
I
C
= 24 A, V
GE
= 15 V, V
CE
= 300 V
10
nC
Q
gc
23
nC
t
d(on)
13
ns
t
ri
15
ns
t
d(off)
70
140
ns
t
fi
60
ns
E
off
0.19
0.30 mJ
t
d(on)
13
ns
t
ri
17
ns
E
on
0.22
mJ
t
d(off)
120
ns
t
fi
130
ns
E
off
0.59
mJ
R
thJC
0.65 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= 24 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
Inductive load, T
J
= 125
C
I
C
= 24 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= 30 A, V
GE
= 0 V, Pulse test T
J
=150
C
1.6
V
t
300 s, duty cycle d 2 %
2.5
V
I
RM
I
F
= 30 A, V
GE
= 0 V, -di
F
/dt =100 A/
s, T
J
= 100
C
4
A
t
rr
V
R
= 100 V
T
J
= 100
C 100
ns
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V
25
ns
R
thJC
0.9 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
TO-268 Outline
2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
120
150
180
210
240
270
0
2
4
6
8
10
12
14
16
18
V
C E
- Volts
I
C
-
A
m
per
es
V
GE
= 15V
5V
7V
9V
11V
13V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0.5
1
1.5
2
2.5
3
3.5
V
CE
- Volts
I
C
-
A
m
per
es
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0.5
1
1.5
2
2.5
3
3.5
V
C E
- Volts
I
C
-
A
m
per
es
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(
sat
)
on
Tem perature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
25
50
75
100
125
150
T
J
- Degrees Centigrade
V
C E
(
sa
t
)
- N
o
rm
a
l
i
z
e
d
I
C
= 24A
I
C
= 12A
V
GE
= 15V
I
C
= 48A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
2
2.5
3
3.5
4
4.5
5
6
7
8
9
10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
-
V
o
l
t
s
T
J
= 25C
I
C
= 48A
24A
12A
Fig. 6. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
200
3
4
5
6
7
8
9
10
11
12
V
G E
- Volts
I
C
-
A
m
per
es
T
J
= 25C
125C
IXGH 30N60C2D1
IXGT 30N60C2D1
IXGH 30N60C2D1
IXGT 30N60C2D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0
20
40
60
80
100 120 140 160 180 200
I
C
- Amperes
g
f s
-
S
i
em
ens
T
J
= 25C
125C
Fig. 8. Dependence of Turn-Off
Energy on R
G
0
200
400
600
800
1000
1200
1400
1600
1800
2000
5
10
15
20
25
30
35
40
45
50
R
G
- Ohms
E
o
ff
-
m
i
c
r
oJ
oul
es
I
C
= 12A
T
J
= 125C
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 48A
Fig. 9. Dependence of Turn-Off
Energy
on I
C
0
200
400
600
800
1000
1200
1400
10
15
20
25
30
35
40
45
50
I
C
- Amperes
E
of
f
-
m
i
c
r
oJ
oul
e
s
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125C
T
J
= 25C
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
0
200
400
600
800
1000
1200
1400
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
E
of
f
-
m
i
c
r
oJ
oul
es
I
C
= 48A
R
G
= 5
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on R
G
100
150
200
250
300
350
400
450
5
10
15
20
25
30
35
40
45
50
R
G
- Ohms
S
w
i
t
c
h
i
ng T
i
m
e
-
nanos
ec
on
d
I
C
= 24A
t
d(off)
t
fi
-
- - - - -
T
J
= 125C
V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 48A
Fig. 12. Dependence of Turn-Off
Sw itching Tim e
on I
C
40
60
80
100
120
140
160
180
200
10
15
20
25
30
35
40
45
50
I
C
- Amperes
S
w
i
t
c
h
i
ng
T
i
m
e
-
nanos
ec
ond
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125C
T
J
= 25C
2005 IXYS All rights reserved
Fig. 14. Gate Charge
0
3
6
9
12
15
0
10
20
30
40
50
60
70
Q
G
- nanoCoulombs
V
G E
- V
o
l
t
s
V
CE
= 300V
I
C
= 24A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
C E
- Volts
C
apac
i
t
anc
e -
p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
40
60
80
100
120
140
160
180
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
S
w
i
t
c
h
i
n
g
T
i
m
e
-
nanos
ec
ond
I
C
= 12A
24A
48A
t
d(off)
t
fi
-
- - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 400V
I
C
= 48A
24A
12A
Fig. 16. Maxim um Transient Therm al Resistance
0.1
1.0
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
0.5
IXGH 30N60C2D1
IXGT 30N60C2D1
IXGH 30N60C2D1
IXGT 30N60C2D1
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0
1
2
3
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
T
VJ
= 100C
T
VJ
= 100C
Fig. 19. Peak reverse current I
RM
Fig. 18. Reverse recovery charge
Fig. 17. Forward current I
F
versus V
F
T
VJ
= 100C
T
VJ
= 100C
I
F
= 60A
I
F
= 30A
Q
r
I
RM
Fig. 20. Dynamic parameters Q
r
, I
RM
Fig. 21. Recovery time t
rr
versus
Fig. 22. Peak forward voltage V
FR
I
F
= 60A
I
F
= 30A
t
fr
V
FR
Fig. 23. Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
Fig. 20. Dynamic parameters Q
r
, I
RM
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