DS99049A(IXGH-IXGT40N60B2)
2004 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25
C
50
A
V
GE
= 0 V
T
J
= 150
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= 24 A, V
GE
= 15 V
T
J
= 25
C
1.8
V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150C
600
V
V
CGR
T
J
= 25
C to 150C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C (limited by leads)
70
A
I
C110
T
C
= 110
C
30
A
I
CM
T
C
= 25
C, 1 ms
150
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
I
CM
= 60
A
(RBSOA)
Clamped inductive load @
600 V
P
C
T
C
= 25
C
190
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque
1.13/10Nm/lb.in.
Weight
4
g
DS99167(04/04)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Features
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
CES
= 600 V
I
C25
= 70 A
V
CE(sat)
< 1.8 V
t
fi typ
= 82 ns
HiPerFAST
TM
IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
IXGP 30N60B2
Advance Technical Data
TO-220 (I
XSP)
G C
E
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGP 30N60B2
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 24 A; V
CE
= 10 V,
18
26
S
Pulse test, t
300 s, duty cycle 2 %
C
ies
1500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
115
pF
C
res
40
pF
Q
g
66
nC
Q
ge
I
C
= 24 A, V
GE
= 15 V, V
CE
= 300 V
9
nC
Q
gc
22
nC
t
d(on)
13
ns
t
ri
15
ns
t
d(off)
110
200
ns
t
fi
82
150
ns
E
off
0.32
0.6 mJ
t
d(on)
13
ns
t
ri
17
ns
E
on
0.22
mJ
t
d(off)
200
ns
t
fi
150
ns
E
off
0.9
mJ
R
thJC
0.65 K/W
R
thCH
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= 24 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
Inductive load, T
J
= 125
C
I
C
= 24 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
50
100
150
200
250
300
0
2
4
6
8
10
12
14
16
18
V
C E
- Volts
I
C
-
A
m
p
e
re
s
V
GE
= 15V
5V
7V
9V
11V
13V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0.5
1
1.5
2
2.5
3
V
CE
- Volts
I
C
-
A
m
per
es
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0.5
1
1.5
2
2.5
3
V
C E
- Volts
I
C
-
A
m
p
e
re
s
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Tem perature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
V
C E
(
s
a
t
)
- N
o
rm
a
l
i
z
e
d
I
C
= 24A
I
C
= 12A
V
GE
= 15V
I
C
= 48A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
3.6
3.9
4.2
5
6
7
8
9
10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- V
o
l
t
s
T
J
= 25C
I
C
= 48A
24A
12A
Fig. 6. Input Adm ittance
0
25
50
75
100
125
150
175
200
225
250
4
5
6
7
8
9
10
11
12
13
V
G E
- Volts
I
C
-
A
m
p
e
re
s
T
J
= -40C
25C
125C
IXGP 30N60B2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGP 30N60B2
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100 125 150 175 200 225 250
I
C
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 8. Dependence of Turn-Off
Energy on R
G
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0
10
20
30
40
50
60
70
80
R
G
- Ohms
E
o
ff
-
m
illiJ
o
u
l
es
I
C
= 12A
T
J
= 125C
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 48A
Fig. 9. Dependence of Turn-Off
Energy
on I
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
10
15
20
25
30
35
40
45
50
I
C
- Amperes
E
of
f
-
M
illiJ
o
u
l
e
s
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125C
T
J
= 25C
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
E
of
f
-
m
illiJ
o
u
l
e
s
I
C
= 48A
R
G
= 5
V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on R
G
100
200
300
400
500
600
700
0
10
20
30
40
50
60
70
80
R
G
- Ohms
S
w
i
t
c
h
i
ng T
i
m
e
-
nanos
ec
ond
I
C
= 24A
t
d(off)
t
fi
-
- - - - -
T
J
= 125C
V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 48A
Fig. 12. Dependence of Turn-Off
Sw itching Tim e
on I
C
60
80
100
120
140
160
180
200
220
240
260
10
15
20
25
30
35
40
45
50
I
C
- Amperes
S
w
i
t
c
h
i
ng T
i
m
e
-
nanos
ec
ond
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 400V
T
J
= 125C
T
J
= 25C
2004 IXYS All rights reserved
Fig. 14. Gate Charge
0
3
6
9
12
15
0
10
20
30
40
50
60
70
Q
G
- nanoCoulombs
V
G E
- V
o
l
t
s
V
CE
= 300V
I
C
= 24A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
C E
- Volts
C
apac
i
t
anc
e -
p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
80
100
120
140
160
180
200
220
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
S
w
i
t
c
h
i
ng T
i
m
e
-
nanos
ec
ond
I
C
= 12A
24A
48A
t
d(off)
t
fi
-
- - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 400V
I
C
= 48A
24A
12A
Fig. 16. Maxim um Transient Therm al Resistance
0.1
1.0
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(
C
/
W
)
0.5
IXGP 30N60B2
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