2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
48
A
I
C90
T
C
= 90
C
24
A
I
CM
T
C
= 25
C, 1 ms
96
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 33
I
CM
= 48
A
(RBSOA)
Clamped inductive load, V
CC
= 0.8 V
CES
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
s
(SCSOA)
R
G
= 33
,
non repetitive
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 50 kHz
Applications
AC and DC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
DS98768B(02/03)
G = Gate
E = Emitter
TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
E
High Speed IGBT
Short Circuit SOA Capability
V
CES
= 600 V
I
C25
= 48 A
V
CE(sat)
= 2.5 V
t
fi typ
= 170 ns
IXSH 24N60B
IXST 24N60B
IXSH 24N60BD1
IXST 24N60BD1
C
E
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 1.5 mA, V
CE
= V
GE
3.5
6.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
24N60B
25
A
24N60BD1
200
A
V
GE
= 0 V T
J
= 125
C
24N60B
1
mA
24N60BD1
2
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
(D1)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
9
13
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
1450
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
24N60B
130
pF
24N60BD1
160
pF
C
res
37
pF
Q
G
41
nC
Q
GE
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
18
nC
Q
GC
18
nC
t
d(on)
50
ns
t
ri
50
ns
t
d(off)
150
250
ns
t
fi
170
300
ns
E
off
1.3
2.6 mJ
t
d(on)
55
ns
t
ri
75
ns
E
on
1.2
mJ
t
d(off)
190
ns
t
fi
280
ns
E
off
2.4
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V,
V
CE
= 0.8 V
CES
, R
G
= 33
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V,
L = 100 H
V
CE
= 0.8 V
CES
, R
G
= 33
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
TO-268 Outline
IXSH 24N60B
IXSH 24N60BD1
IXST 24N60B
IXST 24N60BD1
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
T
J
= 150
C
1.6
V
Pulse test, t
300
s, duty cycle d
2 % T
J
= 25
C
2.5
V
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/
s
6
A
t
rr
V
R
= 100 V
T
J
= 100
C 100
ns
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V T
J
= 25
C
25
ns
R
thJC
0.9 K/W
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