2005 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99446(08/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 50
A
3.0
5.0
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
1.4
Pulse test, t
300
s, duty cycle d
2 %
PolarHV
TM
Power MOSFET
Advance Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
IXTA 5N50P
IXTP 5N50P
IXTY 5N50P
V
DSS
= 500 V
I
D25
= 4.8 A
R
DS(on)
1.4
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
500
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
500
V
V
GSS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
4.8
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
10
A
I
AR
T
C
= 25
C
5
A
E
AR
T
C
= 25
C
20
mJ
E
AS
T
C
= 25
C
250
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 20
P
D
T
C
= 25
C
89
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
TO-263 package for 10s
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
3
g
TO-252
0.8
g
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
D
(TAB)
G
S
TO-252 (IXTY)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
3.0
4.7
S
C
iss
620
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
72
pF
C
rss
6.3
pF
t
d(on)
18
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
18
ns
t
d(off)
R
G
= 20
(External)
45
ns
t
f
16
ns
Q
g(on)
12.6
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
4.3
nC
Q
gd
5.0
nC
R
thJC
1.4 K/W
R
thCK
(TO-220)
0.25
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
5
A
I
SM
Repetitive
15
A
V
SD
I
F
= I
S
, V
GS
= 0 V, -di/dt = 100 A/
s
1.5
V
t
rr
Pulse test, t
300
s, duty cycle d
2 %
400
ns
TO-252 (IXTY) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
Pins: 1 - Gate
2,4 - Drain
3 - Source
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
TO-220 (IXTP) Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Pins: 1 - Gate
2,4 - Drain
3 - Source
2005 IXYS All rights reserved
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Fig. 2. Extended Output Characteristics
@ 25
C
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125
C
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
18
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25
C
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
=
10V
7V
6V
5V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
r
m
aliz
ed
I
D
= 5A
I
D
= 2.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
0
1
2
3
4
5
6
7
8
9
10
I
D
- Amperes
R
D S
(
o
n
)
-
N
o
r
m
aliz
ed
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Fig. 11. Capacitance
1
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apa
c
i
t
a
n
c
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 2.5A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
1
2
3
4
5
6
7
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
- A
m
p
e
r
e
s
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
3
6
9
12
15
0.4
0.5
0.6
0.7
0.8
0.9
1
V
S D
- Volts
I
S
-
A
m
p
e
re
s
T
J
= 125
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
0.1
1
10
100
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXTA 5N50P IXTP 5N50P
IXTY 5N50P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
10.00
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
R
( t
h
) J
C
-
C /
W
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