2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175C
150
V
V
DGR
T
J
= 25
C to 175C; R
GS
= 1 M
150
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
150
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
340
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
80
mJ
E
AS
T
C
= 25
C
2.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
175C, R
G
= 4
P
D
T
C
= 25
C
714
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +175
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-264
10
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99299(01/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 175
C
500
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
13
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
Power MOSFET
Advanced Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-264(SP) (IXTK)
G
D
S
(TAB)
TO-3P (IXTQ)
G
D
S
D (TAB)
V
DSS
= 150
V
I
D25
= 150
A
R
DS(on)
13 m
IXTQ 150N15P
IXTK 150N15P
IXTK 150N15P
IXTQ 150N15P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
55
80
S
C
iss
5800
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1730
pF
C
rss
400
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
33
ns
t
d(off)
R
G
= 3.3
(External)
100
ns
t
f
28
ns
Q
g(on)
190
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
40
nC
Q
gd
105
nC
R
thJC
0.21 K/W
R
thCK
TO-3P
0.21
K/W
R
thCK
TO-264
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
150
A
I
SM
Repetitive
340
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
150
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
2.3
C
1 2 3
TO-3P Outline
TO-264 Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
Dim.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
2005 IXYS All rights reserved
IXTK 150N15P
IXTQ 150N15P
Fig. 2. Extended Output Characteristics
@ 25
C
0
30
60
90
120
150
180
210
240
270
300
330
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
30
60
90
120
150
0
1
2
3
4
5
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
30
60
90
120
150
0
0.2 0.4
0.6 0.8
1
1.2 1.4
1.6 1.8
2
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D S
(
o
n
)
-
N
o
r
m
a
liz
e
d
I
D
= 150A
I
D
= 75A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0
50
100
150
200
250
300
350
I
D
- Amperes
R
D S
(
o
n
)
- N
o
r
m
a
l
i
z
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
IXTK 150N15P
IXTQ 150N15P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apa
c
i
t
a
nc
e -
pi
c
o
F
a
r
a
ds
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 75V
I
D
= 75A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
25
50
75
100
125
150
175
200
225
250
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V
G S
- Volts
I
D
- A
m
p
e
re
s
T
J
= 150
C
25
C
-40
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0
25
50
75
100 125 150 175 200 225 250
I
D
- Amperes
g
f s
-
S
i
em
en
s
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
- A
m
p
e
re
s
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
re
s
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXTK 150N15P
IXTQ 150N15P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0 . 0 1
0 . 1 0
1 . 0 0
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t
h
)
J
C
-
C
/
W
PDF 
ZIP