DRAFT(IXTH60N30P)
2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
500
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
500
V
V
GSM
30
V
I
D25
T
C
= 25
C
16
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
48
A
I
AR
T
C
= 25
C
16
A
E
AR
T
C
= 25
C
25
mJ
E
AS
T
C
= 25
C
1000
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 10
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
TO-263 package for 10s
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
3
g
TO-3P 5.5 g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99323(02/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
10
nA
I
DSS
V
DS
= V
DSS
5
A
V
GS
= 0 V
T
J
= 125
C
50
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
400 m
Pulse test, t
300 s, duty cycle d 2 %
PolarHV
TM
Power MOSFET
Advanced Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-263 (IXTA)
TO-220 (IXTP)
D
(TAB)
G
S
G
S
(TAB)
IXTA 16N50P
IXTP 16N50P
IXTQ 16N50P
V
DSS
= 500 V
I
D25
= 16 A
R
DS(on)
= 400 m
TO-3P (IXTQ)
G
D
S
(TAB)
IXTQ 16N50P IXTA 16N50P
IXTP 16N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
16
S
C
iss
2250
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
240
pF
C
rss
12
pF
t
d(on)
23
n s
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
25
n s
t
d(off)
R
G
= 18
(External)
70
n s
t
f
22
n s
Q
g(on)
43
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
nC
Q
gd
12
nC
R
thJC
0.42 K/W
R
thCK
(TO-220)
0.25 K/W
R
thCK
(TO-3 P) 0.21 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
16
A
I
SM
Repetitive
64
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 16 A
400
n s
-di/dt = 100 A/
s
Pins:
1 - Gate
2 - Drain
TO-220 (IXTP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
TO-3P (IXTQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
2005 IXYS All rights reserved
Fig. 1. Output Characteristics
@ 25
C
0
4
8
12
16
20
24
0
2
4
6
8
10
12
14
16
18
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
5V
7V
6V
Fig. 2. Output Characteristics
@ 125
C
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
8V
6V
5V
7V
Fig. 3. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
I
D
= 16A
I
D
= 8A
V
GS
= 10V
Fig. 6. Input Adm ittance
0
2
4
6
8
10
12
14
16
18
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125
C
25
C
-40
C
Fig. 5. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 4. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
4
8
12
16
20
24
I
D
- Amperes
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXTQ 16N50P IXTA 16N50P
IXTP 16N50P
IXTQ 16N50P IXTA 16N50P
IXTP 16N50P
Fig. 10. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
i
t
anc
e
-
pic
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 8A
I
G
= 10mA
Fig. 7. Transconductance
0
4
8
12
16
20
24
0
2
4
6
8
10
12
14
16
18
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 8. Source Current vs.
Source-To-Drain Voltage
0
5
10
15
20
25
30
35
40
45
50
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125
C
T
J
= 25
C
Fig. 11. Forw ard-Bias
Safe Operating Area
1
10
100
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
re
s
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
(
t
h
) J
C
-
C /
W
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