2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
300
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
300
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
36
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
90
A
I
AR
T
C
= 25
C
36
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 10
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
TO-263 package for 10s
M
d
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99155A(01/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
92
110
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-263 (I
XTA)
TO-220 (I
XTP)
TO-3P (IXTQ)
G
D
S
(TAB)
D
(TAB)
G
S
G
S
D(TAB)
IXTQ 36N30P
IXTA 36N30P
IXTP 36N30P
V
DSS
= 300 V
I
D25
= 36 A
R
DS(on)
= 110 m
IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
12
22
S
C
iss
2250
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
370
pF
C
rss
90
pF
t
d(on)
24
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
30
ns
t
d(off)
R
G
= 10
(External)
97
ns
t
f
28
ns
Q
g(on)
70
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
17
nC
Q
gd
35
nC
R
thJC
0.42 K/W
R
thCK
(TO-3P)
0.21
K/W
(TO-220)
0.25
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
36
A
I
SM
Repetitive
90
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
250
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 100 V
2.0
C
TO-3P (IXTQ) Outline
Pins: 1 - Gate
2 - Drain
TO-220 (IXTP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
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5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 125
C
0
3
6
9
12
15
18
21
24
27
30
33
36
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
C
0
3
6
9
12
15
18
21
24
27
30
33
36
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 36A
I
D
= 18A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
4.2
0
10
20
30
40
50
60
70
80
90
I
D
- Amperes
R
D
S
(
o
n )
-
N
o
r
m
a
liz
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apa
c
i
t
a
nc
e -
pi
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 150V
I
D
= 18A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V
G S
- Volts
I
D
-
A
m
per
e
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
80
90
I
D
- Amperes
g
f s
-
S
i
em
en
s
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
90
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
V
S D
- Volts
I
S
-
A
m
p
e
re
s
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0 . 0 5
0 . 1 0
0 . 1 5
0 . 2 0
0 . 2 5
0 . 3 0
0 . 3 5
0 . 4 0
0 . 4 5
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
C /
W
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