2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175 C
150
V
V
DGR
T
J
= 25
C to 175 C; R
GS
= 1 M
150
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
62
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
150
A
I
AR
T
C
= 25
C
50
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150 C, R
G
= 10
P
D
T
C
= 25
C
350
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
T
SOLD
Plastic body for 10 s
2600
C
Md
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99154E(12/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
BV
DSS
V
GS
= 0 V, I
D
= 250
A
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 150
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
33
40
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
Power MOSFET
IXTA 62N15P
IXTP 62N15P
IXTQ 62N15P
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-220 (IXTP)
TO-263 (IXTA)
TO-3P (IXTQ)
G
D
S
(TAB)
D
(TAB)
G
S
G
S
(TAB)
V
DSS
= 150 V
I
D25
= 62 A
R
DS(on)
40 m
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
14
24
S
C
iss
2250
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
660
pF
C
rss
185
pF
t
d(on)
27
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
38
ns
t
d(off)
R
G
= 10
(External)
76
ns
t
f
35
ns
Q
g(on)
70
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
nC
Q
gd
38
nC
R
thJC
0.42
C/W
R
thCS
(TO-3P)
0.21
C/W
(TO-220)
0.25
C/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
62
A
I
SM
Repetitive
150
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A, -di/dt = 100 A/
s
150
ns
Q
RM
V
R
= 100 V, V
GS
= 0 V
2.0
C
TO-3P (IXTQ) Outline
Pins: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
TO-220 (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2
TO-263 (IXTA) Outline
2006 IXYS All rights reserved
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Fig. 2. Extended Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
110
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
0
0.5
1
1.5
2
2.5
3
3.5
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
7V
6V
8V
9V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S (
o n
)
-
N
o
rm
a
l
i
z
e
d
I
D
= 62A
I
D
= 31A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.5
1
1.5
2
2.5
3
3.5
4
0
20
40
60
80
100
120
140
160
180
I
D
- Amperes
R
D
S
(
o n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 175C
T
J
= 25C
V
GS
= 10V
V
GS
= 15V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pa
c
i
t
a
nc
e -
pi
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 75V
I
D
= 31A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
15
30
45
60
75
90
105
120
5
6
7
8
9
10
11
V
G S
- Volts
I
D
-
A
m
p
e
re
s
T
J
= 150C
25C
-40C
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
36
0
15
30
45
60
75
90
105 120 135 150
I
D
- Amperes
g
f s
-
S
i
em
en
s
T
J
= -40C
25C
150C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
30
60
90
120
150
180
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 150C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
1
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
re
s
100s
1ms
DC
T
J
= 175C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2006 IXYS All rights reserved
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0 . 0 5
0 . 1 0
0 . 1 5
0 . 2 0
0 . 2 5
0 . 3 0
0 . 3 5
0 . 4 0
0 . 4 5
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - millis e c o n d s
R
( t
h
) J C
-
C / W
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