2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175C
100
V
V
DGR
T
J
= 25
C to 175C; R
GS
= 1 M
100
V
V
GSM
20
V
I
D25
T
C
= 25
C
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
200
A
I
AR
T
C
= 25
C
50
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 10
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
TO-263 package for 10s
M
d
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99158(03/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
21
25
m
Pulse test, t
300 s, duty cycle d 2 %
PolarHT
TM
Power MOSFET
Advanced Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
TO-263 (I
XTA)
TO-220 (I
XTP)
G
D
S
(TAB)
D
(TAB)
G
S
G
S
(TAB)
IXTQ 75N10P
IXTA 75N10P
IXTP 75N10P
V
DSS
= 100 V
I
D25
= 75 A
R
DS(on)
= 25 m
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
20
28
S
C
iss
2250
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
890
pF
C
rss
275
pF
t
d(on)
27
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
53
ns
t
d(off)
R
G
= 10
(External)
66
ns
t
f
45
ns
Q
g(on)
74
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
18
nC
Q
gd
40
nC
R
thJC
0.42 K/W
R
thCK
(TO-3P)
0.21
K/W
(TO-220)
0.25
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
75
A
I
SM
Repetitive
200
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
120
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 75 V
1.4
C
TO-3P (IXTQ) Outline
Pins: 1 - Gate
2 - Drain
TO-220 (IXTA) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTP) Outline
2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
110
120
0
1
2
3
4
5
6
7
8
9
10 11 12
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 125
C
0
10
20
30
40
50
60
70
80
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(
o
n
)
-
N
o
rm
a
l
i
z
e
d
I
D
= 75A
I
D
= 37.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
20
40
60
80
100
120
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apa
c
i
t
a
nc
e -
pi
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 50V
I
D
= 37.5A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
15
30
45
60
75
90
105
120
5
6
7
8
9
10
11
V
G S
- Volts
I
D
- A
m
p
e
re
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
36
40
0
20
40
60
80
100
120
140 160
180
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
1
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
2004 IXYS All rights reserved
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0 . 0 5
0 . 1 0
0 . 1 5
0 . 2 0
0 . 2 5
0 . 3 0
0 . 3 5
0 . 4 0
0 . 4 5
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
C /
W
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
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